Supertex inc.
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►
►
►
►
►
►
►
Low threshold - 2.0V max.
High input impedance
Low input capacitance - 50pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
TN0106
General Description
This low threshold, enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination produces
a device with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low
input capacitance, and fast switching speeds are desired.
Applications
►
►
►
►
►
►
►
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TN0106
Package
TO-92
TN0106N3-G
NW
(Die in wafer form)
Wafer / Die Options
NJ
(Die on adhesive tape)
ND
(Die in waffle pack)
TN1506NW
TN1506NJ
TN1506ND
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF15 for layout and dimensions.
Product Summary
Device
TN0106N3-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
V
GS(th)
(max)
(V)
Pin Configurations
60
3.0
2.0
2.0
SOURCE
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
GATE
TO-92 (N3)
Product Marking
S iT N
01 0 6
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Package may or may not include the following marks: Si or
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
TN0106
Thermal Characteristics
Package
TO-92
(continuous)
(mA)
I
D
†
(pulsed)
(A)
I
D
Power Dissipation
@T
C
= 25
O
C
(W)
O
( C/W)
θ
jc
( C/W)
O
θ
ja
(mA)
I
DR
†
I
DRM
(A)
350
2.0
1.0
125
170
350
2.0
Notes:
† I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
A
= 25
O
C unless otherwise specified)
Min
60
0.6
-
-
-
Typ
-
-
-3.2
-
-
-
1.4
3.4
2.0
1.6
0.6
400
50
25
4.0
2.0
3.0
6.0
3.0
1.0
400
Max
-
2.0
-5.0
100
10
500
-
-
4.5
3.0
1.1
-
60
35
8.0
5.0
5.0
7.0
6.0
1.5
-
Units
V
V
nA
µA
Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 0.5mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V,T
A
= 125°C
V
GS
= 5.0V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 250mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
V
DD
= 25V,
I
D
= 1.0A,
R
GEN
= 25Ω
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero Gate voltage drain current
mV/
O
C V
GS
= V
DS
, I
D
= 1.0mA
-
0.75
2.0
-
-
-
225
-
-
-
-
-
-
-
-
On-state drain current
Static drain-to-source on-state resistance
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
A
Ω
%/
O
C
mmho V
DS
= 25V, I
D
= 500mA
pF
ns
V
ns
V
GS
= 0V, I
SD
= 500mA
V
GS
= 0V, I
SD
= 500mA
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90%
10%
t
(ON)
V
DD
Pulse
Generator
R
L
OUTPUT
INPUT
0V
t
(OFF)
t
r
t
d(OFF)
t
f
10%
90%
90%
R
GEN
t
d(ON)
VDD
OUTPUT
0V
10%
INPUT
D.U.T.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
2
Tel: 408-222-8888
www.supertex.com
TN0106
Typical Performance Curves
5.0
Output Characteristics
5.0
Saturation Characteristics
4.0
V
GS
= 10V
4.0
V
GS
= 10V
I
D
(amperes)
I
D
(amperes)
3.0
8V
3.0
8V
2.0
2.0
6V
1.0
6V
1.0
4V
2V
4V
2V
0
0
10
20
V
DS
(volts)
30
40
50
0
0
2.0
4.0
6.0
8.0
10
V
DS
(volts)
0.5
Transconductance vs. Drain Current
T
A
= -55
O
C
2.0
Power Dissipation vs. Case Temperature
0.4
T
A
= 25
O
C
G
FS
(siemens)
P
D
(watts)
0.3
T
A
= 150
O
C
1.0
TO-92
0.2
0.1
0
V
DS
= 25V
0
0.6
1.2
1.8
2.4
3.0
0
0
25
50
75
100
125
150
I
D
(amperes)
T
C
( C)
O
10
Maximum Rated Safe Operating Area
T
C
= 25
O
C
1.0
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
TO-92 (pulsed)
1.0
I
D
(amperes)
0.6
TO-92 (DC)
0.1
0.4
0.2
TO-92
T
C
= 25
O
C
P
D
= 1W
0.01
1.0
10
100
1000
0
0.001
0.01
0.1
1.0
10
V
DS
(volts)
t
p
(seconds)
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
3
Tel: 408-222-8888
www.supertex.com
TN0106
Typical Performance Curves
(cont.)
1.3
BV
DSS
Variation with Temperature
5.0
On-Resistance vs. Drain Current
V
GS
= 5.0V
V
GS
= 10V
1.2
4.0
BV
DSS
(normalized)
R
DS(ON)
(ohms)
1.1
3.0
1.0
2.0
0.9
1.0
0.8
-50
0
50
100
150
0
0
1.0
2.0
3.0
4.0
5.0
T
j
(
O
C)
I
D
(amperes)
3.0
Transfer Characteristics
V
DS
= 25V
T
A
= -55
O
C
1.4
V
(th)
and R
DS
Variation with Temperature
1.4
2.4
1.2
V
(th)
@ 0.5mA
1.2
I
D
(amperes)
25
O
C
1.8
1.0
R
DS(ON)
@ 10V, 0.5A
1.0
1.2
150
O
C
0.8
0.8
0.6
0.6
0.6
0
0
2.0
4.0
V
GS
(volts)
6.0
8.0
10
0.4
-50
0
50
100
0.4
150
T
j
(
O
C)
100
Capacitance vs. Drain-to-Source Voltage
f = 1.0MHz
10
Gate Drive Dynamic Characteristics
V
DS
= 10V
8.0
75
C (picofarads)
50
C
ISS
V
GS
(volts)
6.0
55pF
V
DS
= 40V
4.0
25
C
OSS
2.0
C
RSS
0
0
10
20
30
40
0
0
1.0
50pF
2.0
3.0
4.0
5.0
V
DS
(volts)
Q
G
(nanocoulombs)
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
4
Tel: 408-222-8888
www.supertex.com
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
TN0106
3-Lead TO-92 Package Outline (N3)
D
Seating
Plane
A
1
2
3
L
e1
e
b
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
†
-
.022
†
c
.014
†
-
.022
†
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
(website: http//www.supertex.com)
©2011
Supertex inc.
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-TN0106
B080811
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
5
Supertex inc.
Electronics Design Contest
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