89LV1632RPQK-35 datasheet, PDF

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89LV1632RPQK-35: DescriptionSRAM Module, 512KX32, 30ns, CMOS, CQFP68, HERMETICALLY SEALD, CERAMIC, QFP-68; Categorystorage storage; File Size195KB，12 Pages; ManufacturerMaxwell Technologies Inc.

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89LV1632RPQK-35 Overview

SRAM Module, 512KX32, 30ns, CMOS, CQFP68, HERMETICALLY SEALD, CERAMIC, QFP-68

89LV1632RPQK-35 Parametric

Parameter Name	Attribute value
Parts packaging code	QFP
package instruction	GQFF,
Contacts	68
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Maximum access time	30 ns
JESD-30 code	S-CQFP-F68
length	37.9476 mm
memory density	16777216 bit
Memory IC Type	SRAM MODULE
memory width	32
Number of functions	1
Number of terminals	68
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX32
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	GQFF
Package shape	SQUARE
Package form	FLATPACK, GUARD RING
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	6.1976 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	QUAD
width	37.9476 mm
Base Number Matches	1

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89LV1632

16 Megabit (512K x 32-Bit)

Low Voltage MCM SRAM

16 Megabit (512k x 32-bit) SRAM MCM

CS 1-4

Address

OE, WE

89LV1632

Power

4Mb SRAM

Ground

MCM

Memory

I/O 0-7

I/O 8-15

I/O 16-23

I/O 24-31

Logic Diagram

EATURES

• Four 512k x 8 SRAM architecture

• R

-P

® technology hardens against natural space radia-

tion technology

• Total dose hardness:

- > 100 krad (Si), depending upon space mission

• Excellent Single Event Effects:

- SEL > 101MeV-cm

/mg

- SEU threshold = 3 MeV-cm

/mg

- SEU saturated cross section: 8E-9 cm

/bit

• Package: 68-pin quad flat package

• Completely static memory - no clock or timing strobe

required

• Internal bypass capacitor

• High-speed silicon-gate CMOS technology

• 3.3 V ± 10% power supply

• Equal address and chip enable access times

• Three-state outputs

• All inputs and outputs are TTL compatible

ESCRIPTION

Maxwell Technologies’ 89LV1632 high-performance 16 Mega-

bit Multi-Chip Module (MCM) Static Random Access Memory

features a greater than 100 krad(Si) total dose tolerance,

depending upon space mission. The four 4-Megabit SRAM die

and bypass capacitors are incorporated into a high-reliable

hermetic quad flat-pack ceramic package. With high-perfor-

mance silicon-gate CMOS technology, the 89LV1632 reduces

power consumption and eliminates the need for external

clocks or timing strobes. It is equipped with output enable

(OE) and four byte enable (CS1 - CS4) inputs to allow greater

system flexibility. When OE input is high, the output is forced

to high impedance.

Maxwell Technologies' patented R

-P

® packaging technol-

ogy incorporates radiation shielding in the microcircuit pack-

age. In a GEO orbit, R

-P

® packaging provides true

greater than 100 krad(Si) total radiation dose tolerance,

dependent upon space mission. It eliminates the need for box

shielding while providing the required radiation shielding for a

lifetime in orbit or a space mission. This product is available in

with screening up to Maxwell Technologies self-defined Class

01.07.05 REV 2

All data sheets are subject to change without notice

(619) 503-3300 - Fax: (619) 503-3301 - www.maxwell.com

89LV1632RPQK-35 Related Products

	89LV1632RPQK-35	89LV1632RPQI-35	89LV1632RPQH-35	89LV1632RPQE-35
Description	SRAM Module, 512KX32, 30ns, CMOS, CQFP68, HERMETICALLY SEALD, CERAMIC, QFP-68	SRAM Module, 512KX32, 30ns, CMOS, CQFP68, HERMETICALLY SEALD, CERAMIC, QFP-68	SRAM Module, 512KX32, 30ns, CMOS, CQFP68, HERMETICALLY SEALD, CERAMIC, QFP-68	SRAM Module, 512KX32, 30ns, CMOS, CQFP68, HERMETICALLY SEALD, CERAMIC, QFP-68
Parts packaging code	QFP	QFP	QFP	QFP
package instruction	GQFF,	GQFF,	GQFF,	GQFF,
Contacts	68	68	68	68
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	30 ns	30 ns	30 ns	30 ns
JESD-30 code	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68	S-CQFP-F68
length	37.9476 mm	37.9476 mm	37.9476 mm	37.9476 mm
memory density	16777216 bit	16777216 bit	16777216 bit	16777216 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	32	32	32	32
Number of functions	1	1	1	1
Number of terminals	68	68	68	68
word count	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
organize	512KX32	512KX32	512KX32	512KX32
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	GQFF	GQFF	GQFF	GQFF
Package shape	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLATPACK, GUARD RING	FLATPACK, GUARD RING	FLATPACK, GUARD RING	FLATPACK, GUARD RING
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	6.1976 mm	6.1976 mm	6.1976 mm	6.1976 mm
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	FLAT	FLAT	FLAT	FLAT
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	QUAD	QUAD	QUAD	QUAD
width	37.9476 mm	37.9476 mm	37.9476 mm	37.9476 mm
Maker	-	Maxwell Technologies Inc.	Maxwell Technologies Inc.	Maxwell Technologies Inc.

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