6226A30M/BUAJC datasheet, PDF - EEWORLD Datasheet

6226A30M/BUAJC: DescriptionIC,SRAM,128KX8,CMOS,LLCC,32PIN,CERAMIC; Categorystorage storage; File Size513KB，8 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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6226A30M/BUAJC Overview

IC,SRAM,128KX8,CMOS,LLCC,32PIN,CERAMIC

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SON, SOLCC32,.55
Reach Compliance Code	unknown
Maximum access time	30 ns
I/O type	COMMON
JESD-30 code	R-XDSO-N32
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	SON
Encapsulate equivalent code	SOLCC32,.55
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.01 A
Minimum standby current	4.5 V
Maximum slew rate	0.14 mA
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Base Number Matches	1

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