66314
10/17/2012
Features:
35 kV HIGH VOLTAGE, RADIATION TOLERANT ISOLATOR
OPTOELECTRONIC PRODUCTS
DIVISION
Applications:
High Voltage Isolation
Voltage Level Shifting
Grid Current Modulator
Switching power supplies
Medical systems
Designed to exceed MIL-PRF-19500 radiation
requirements
35 kVdc Isolation
Current Transfer Ratio 150% typical
Base lead provided for conventional transistor
biasing
DESCRIPTION
The
66314
high voltage isolator consisting of an 850 nm LED optically coupled to a radiation tolerant phototransistor. This
configuration has proven to be highly tolerant to both proton and total dose radiation. The isolator is built with hermetic
components internally optically coupled and encased in a high temperature outer PPS plastic housing.
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C unless otherwise specified)
Isolation Voltage (Input to Output) (Note 2)....................................................................................................................... 35 kVdc
Operating Free-Air Temperature Range ..............................................................................................................-40
°
C to +100
°
C
Storage Temperature............................................................................................................................................-40
°
C to +100
°
C
Lead Solder Temperature (10 seconds, 1.6mm from case) (Note 1) .................................................................................. 260
°
C
LED:
Peak Forward Input Current (2
s
duration).......................................................................................................................300 mA
Average Forward Input Current ...........................................................................................................................................50 mA
Reverse Input Voltage ........................................................................................................................................................... 3.0 V
Input Power Dissipation ....................................................................................................................................................100 mW
Output Transistor:
Collector-Base Voltage ............................................................................................................................................................ 40 V
Collector-Emitter Voltage ........................................................................................................................................................ 40 V
Emitter-Base Voltage ................................................................................................................................................................ 4 V
Continuous Collector Current ...............................................................................................................................................50 mA
Continuous Transistor Power Dissipation ........................................................................................................................300 mW
Package Dimensions
PIN 1
ANODE IDENTIFIER
PIN
1
2
3
4
FUNCTION
ANODE
CATHODE
COLLECTOR
BASE
EMITTER
Schematic Diagram
0.280
2.250
5
ANODE 1
0.050 X 45°
LED END
0.475 0.500
3 COLLECTOR
0.075
Ø0.020 TYP.
2.100±0.010
0.090
2
3
0.125±0.020
5 EMITTER
CATHODE 2
4 BASE
0.065
0.075
0.100
1
5
4
0.075
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
725 E. Walnut Street, Garland, TX 75040
(972) 272-3571
Fax (972) 487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
66314
10/17/2012
35 kV HIGH VOLTAGE, RADIATION TOLERANT ISOLATOR
ELECTRICAL CHARACTERISTICS
(
T
A
= 25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
NOTE
Input LED
Input Forward Voltage
Reverse Current
V
F
I
R
1.3
1.8
100
V
µA
I
F
= 20 mA
V
R
= 3.0 V
Output Transistor
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEO
40
40
4
100
V
V
V
nA
I
C
= 100
μA,
I
E
= 0, I
F
= 0
I
C
= 1 mA, I
B
= 0, I
F
= 0
I
C
= 0, I
E
= 100
μA,
I
F
= 0
V
CC
= 20 V, I
F
= 0
Coupled Characteristics
Current Transfer Ratio
Collector-Emitter Saturation Voltage
Input – Output Isolation Voltage
Rise Time
Fall Time
CTR
V
CE(SAT)
V
I-O
t
r
t
f
35,000
20
20
50
0.3
%
V
V
µs
µs
V
CE
= 1 V, I
F
= 10 mA
I
F
= 20 mA, I
C
= 10 mA
I
I-O
= 25
A
V
CC
= 10 V, I
F
= 10 mA,
R
L
= 100Ω
V
CC
= 10 V, I
F
= 10 mA,
R
L
= 100
Ω
2
NOTES:
1) The duration can be extended to 10 seconds maximum when flow soldering. Otherwise 5 seconds with soldering iron.
2) Device considered a two terminal device with all Input pins (Anode and Cathode) shorted together and all Output pins (Collector, Emitter and Base)
shorted together.
SELECTION GUIDE
PART #
66314-001
66314-101
Commercial
Screened
PART DESCRIPTION
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
725 E. Walnut Street, Garland, TX 75040
(972) 272-3571
Fax (972) 487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
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