DATA SHEET
GaAs INTEGRATED CIRCUIT
µ
PG2053K
GaAs MMIC DBS 4 x 2 IF SWITCH MATRIX
FEATURES
• HIGH ISOLATION
• CONTROL VOLTAGE
: ISL = 38 dB TYP. @ f = 0.95 to 2.15 GHz, V
CONT
= +5.0 V/0 V
: V
CONT (H)
= +4.5 to +5.5 V (+5.0 V TYP.)
: V
CONT (L)
=
−0.5
to +0.5 V (0 V TYP.)
• LOW INSERTION LOSS : L
INS
= 6.0 dB TYP. @ f = 0.95 to 2.15 GHz, V
CONT
= +5.0 V/0 V, Z
O
= 50
Ω
• 20-PIN 4
×
4 mm SQUARE MICRO LEAD PACKAGE (20-pin plastic QFN (0.5 mm pitch))
APPLICATIONS
• Direct Broadcast Satellite (DBS)
• Switch Box
• 4
×
2 switch matrix to L, S band applications
ORDERING INFORMATION
Part Number
Package
20-pin plastic QFN
(0.5 mm pitch)
Marking
G2053
Supplying Form
•
Embossed tape 12 mm wide
•
Pin 1 to 5 face the perforation side of the tape
•
Qty 3 kpcs/reel
µ
PG2053K-E3
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order:
µ
PG2053K
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10503EJ01V0DS (1st edition)
Date Published June 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2004
µ
PG2053K
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C, unless otherwise specified)
Parameter
Supply Voltage
Control Voltage
Total Power Dissipation
Input Power
Operating Ambient Temperature
Storage Temperature
Symbol
V
DD
V
CONT1 to 4
P
tot
P
in
T
A
T
stg
Ratings
−1.0
to +6.0
−1.0
to +6.0
2
Note
Unit
V
V
W
dBm
°C
°C
+10
−40
to +85
−65
to +150
Note
Mounted on double-sided copper-clad 50
×
50
×
1.6 mm epoxy glass PWB, T
A
= +85°C
RECOMMENDED OPERATING CONDITIONS (T
A
= +25°C)
Parameter
Supply Voltage
Control Voltage (H)
Control Voltage (L)
Symbol
V
DD
V
CONT (H)
V
CONT (L)
MIN.
+4.5
+4.5
−0.5
TYP.
+5.0
+5.0
0
MAX.
+5.5
+5.5
+0.5
Unit
V
V
V
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, V
DD
= +5.0 V, V
CONT
= +5.0 V/0 V, P
in
= 0 dBm, Z
O
= 50
Ω,
each port, unless otherwise
specified)
Parameter
Insertion Loss
Insertion Loss Flatness
Isolation D/U-ratio
Note 1
Symbol
L
INS
Test Conditions
f = 0.95 to 2.15 GHz
L
INS (0.95 GHz)
−
L
INS (2.15 GHz)
f = 0.95 to 2.15 GHz
f = 0.95 to 2.15 GHz
V
CONT
= +5.0 V/0 V, non-RF
V
CONT
= +5.0 V/0 V, non-RF
MIN.
−
−
35
10
−
−
TYP.
6.0
0.5
38
15
−
−
MAX.
8.0
1.5
−
−
0.5
2.0
Unit
dB
dB
dB
dB
mA
mA
∆
L
INS
ISL
RL
out
I
CONT
I
DD
Output Return Loss
Control Current
Supply Current
Note 2
Notes 1.
Isolation D/U-ratio =
(Signal
leakage (off-state))
−
(Insertion loss (on-state))
2.
Per 1 control pin
2
Data Sheet PG10503EJ01V0DS
Embedded System
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