DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
PC3225TB
5 V, SILICON GERMANIUM MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
The
µ
PC3225TB is a silicon germanium (SiGe) monolithic integrated circuits designed as IF amplifier for DBS
tuners. This IC is manufactured using our 50 GHz f
max
UHS2 (Ultra High Speed Process) SiGe bipolar process.
FEATURES
• Wideband response
• Low current
• Medium output power
• High linearity
• Power gain
• Noise Figure
• Supply voltage
• Port impedance
: f
u
= 2.8 GHz TYP. @ 3 dB bandwidth
: I
CC
= 24.5 mA TYP.
: P
O (sat)
= +15.5 dBm TYP. @ f = 0.95GHz
: P
O (sat)
= +12.5 dBm TYP. @ f = 2.15 GHz
: P
O (1dB)
= +9.0 dBm TYP. @ f = 0.95 GHz
: P
O (1dB)
= +7.0 dBm TYP. @ f = 2.15 GHz
: G
P
= 32.5 dB TYP. @ f = 0.95 GHz
: G
P
= 33.5 dB TYP. @ f = 2.15 GHz
: NF = 3.7 dB TYP. @ f = 0.95 GHz
: NF = 3.7 dB TYP. @ f = 2.15 GHz
: V
CC
= 4.5 to 5.5 V
: input/output 50
Ω
APPLICATIONS
• IF amplifiers in LNB for DBS converters etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
C3M
Supplying Form
Embossed tape 8 mm wide.
1, 2, 3 pins face the perforation side of the tape.
Qty 3 kpcs/reel.
µ
PC3225TB-E3
µ
PC3225TB-E3-A 6-pin super minimold
(Pb-Free)
Note
Note
With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark
To order evaluation samples, please contact your nearby sales office
Part number for sample order:
µ
PC3225TB.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10500EJ01V0DS (1st edition)
Date Published December 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2004
µ
PC3225TB
PIN EXPLANATION
Pin
No.
4
Pin
Name
INPUT
Applied
Voltage
(V)
−
Pin
Voltage
(V)
Note
Function and Applications
0.98
Signal input pin.
A internal matching circuit, configured with resistors, enables 50
Ω
connection over a wide band.
A multi-feedback circuit is designed to cancel the deviations of h
FE
and
resistance.
This pin must be coupled to signal source with capacitor for DC cut.
1
OUTPUT
Voltage
as same
as V
CC
through
external
inductor
−
Signal output pin.
The inductor must be attached between V
CC
and output pins to supply
current to the internal output transistors.
3
V
CC
4.5 to 5.5
−
Power supply pin.
Which biases the internal input transistor.
This pin should be externally equipped with bypass capacitor to
minimize its impedance.
2
5
6
GND
0
−
Ground pin.
This pin should be connected to system ground with minimum
inductance. Ground pattern on the board should be formed as wide as
possible.
All the ground pins must be connected together with wide ground
pattern to decrease impedance defference.
Note
Pin voltage is measured at V
CC
= 5.0 V
Data Sheet PU10500EJ01V0DS
3
µ
PC3225TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Total Circuit Current
Power Dissipation
Operating Ambient Temperature
Storage Temperature
Input Power
Symbol
V
CC
I
CC
P
D
T
A
T
stg
P
in
T
A
= +25°C
Conditions
T
A
= +25°C, Pin 1 and 3
T
A
= +25°C
T
A
= +85°C
Note
Ratings
6
45
270
−40
to +85
−55
to +150
0
Unit
V
mA
mW
°C
°C
dBm
Note
Mounted on double-sided copper-clad 50
×
50
×
1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Supply Voltage
Symbol
V
CC
Conditions
The same voltage should be applied
to pin 1 and 3.
Operating Ambient Temperature
T
A
−40
+25
+85
°C
MIN.
4.5
TYP.
5.0
MAX.
5.5
Unit
V
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, V
CC
= V
out
= 5.0 V, Z
S
= Z
L
= 50
Ω)
Parameter
Circuit Current
Power Gain
Symbol
I
CC
G
P
Test Conditions
No input signal
f = 0.95 GHz, P
in
=
−35.0
dBm
f = 2.15 GHz, P
in
=
−35.0
dBm
Saturated Output Power
P
O (sat)
f = 0.95 GHz, P
in
=
－5.0
dBm
f = 2.15 GHz, P
in
=
－5.0
dBm
Gain 1 dB Compression Output Power
P
O (1 dB)
f = 0.95 GHz
f = 2.15 GHz
Noise Figure
NF
f = 0.95 GHz
f = 2.15 GHz
Upper Limit Operating Frequency
f
u
3 dB down below flat gain at f = 0.95
GHz
Isolation
ISL
f = 0.95 GHz, P
in
=
−35.0
dBm
f = 2.15 GHz, P
in
=
−35.0
dBm
Input Return Loss
RL
in
f = 0.95 GHz, P
in
=
−35.0
dBm
f = 2.15 GHz, P
in
=
−35.0
dBm
Output Return Loss
RL
out
f = 0.95 GHz, P
in
=
−35.0
dBm
f = 2.15 GHz, P
in
=
−35.0
dBm
Gain Flatness
36.0
36.0
7.0
8.0
7.0
9.5
−
41.0
45.0
8.5
11.0
10.5
13.0
2.5
−
−
−
−
−
−
4.0
dB
dB
dB
dB
MIN.
20.0
30.0
30.5
+13.5
+10.5
+7.0
+5.0
−
−
−
TYP.
24.5
32.5
33.5
+15.5
+12.5
+9.0
+7.0
3.7
3.7
2.8
MAX.
31.0
35.0
36.0
−
−
−
−
4.5
4.5
−
GHz
dB
dBm
dBm
Unit
mA
dB
∆
G
P
f = 0.95 to 2.15 GHz
4
Data Sheet PU10500EJ01V0DS
LED Zone
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