ASMT-Mx6x & ASMT-MxHx
Moonstone
TM
½W Power LED Light Source
Data Sheet
Description
½W Power LED Light Source is a high performance energy
efficient device which can handle high thermal and high
driving current. The exposed pad design has excellent
heat transfer from the package to the motherboard. Op-
tion with electrically isolated metal slug is also available
The Cool White Power LED is available in various color
temperature ranging from 4000K to 10000K and Warm
White Power LED ranging from 2600K to 4000K.
The low profile package design is suitable for a wide vari-
ety of applications especially where height is a constraint.
The package is compatible with reflow soldering. This will
give more freedom and flexibility to the light source de-
signer.
Features
x
Available in Cool White and Warm White color
x
Available in diffuse and non-diffuse version
x
Available in both electrical isolated and non-isolated
metal slug
x
Energy efficient
x
Exposed pad for excellent heat transfer
x
Suitable for reflow soldering process
x
High current operation
x
Long operation life
x
Wide viewing angle
x
Silicone encapsulation
x
ESD HBM Class 3B, > 8000
x
MSL 4 products
x
High junction temperature of 145°C
Applications
x
Sign backlight
x
Safety, exit and emergency sign lightings
x
Specialty lighting such as task lighting and reading
lights
x
Retail display
x
Commercial lighting
x
Accent or marker lightings, strip or step lightings
Specifications
x
InGaN Technology
x
3.5V, 150mA (typical)
x
110 viewing angle
Package Dimensions
10.00
1
Anode
2 Cathode
3
Heat Sink
3.30
8.50
Metal Slug
3
Ø 5.26
10.60
8.50
Ø 8.00
1.27
LED
+
−
ZENER
2.00
1.30
1
5.08
2
0.81
5.25
Notes:
1. All dimensions are in millimeters.
2. Unless otherwise stated, the tolerance for dimension is ±0.1mm.
3. Metal slug is connected to anode for electrically non-isolated option.
Device Selection Guide (Tj = 25°C)
Luminous Flux, Φ
V [1,2]
(lm)
Part Number
ASMT-MW60
ASMT-MW62
ASMT-MY60
ASMT-MY62
ASMT-MWH0
ASMT-MWH2
ASMT-MYH0
ASMT-MYH2
Notes:
1. ΦV is the total luminous flux output as measured with an integrating sphere at 25ms mono pulse condition.
2. Flux tolerance is ±10 %
Color
Cool White
Warm White
Cool White Diffused
Warm White Diffused
Min.
19.5
15.0
15.0
11.5
Typ.
30.0
25.0
25.0
20.0
Max.
43.0
33.0
43.0
33.0
Test Current
(mA)
150
150
150
150
Dice
Technology
InGaN
InGaN
InGaN
InGaN
Electrically
Isolated
Metal Slug
No
Yes
No
Yes
No
Yes
No
Yes
2
Part Numbering System
ASMT
–
M x x x
–
N x
1
x
2
x
3
x
4
Packaging Option
0
– Tube
1 – Tape
and Reel
Color
Bin
Selection
Maximum
Flux Bin
Minimum
Flux Bin
Heat
Sink
0
–
Electrically Non-isolated
2
–
Electrically Isolated
Silicone
Type
6
–
Non-diffused
H
–
Diffused
Color
W
–
Cool White
Y
–
Warm White
Absolute Maximum Ratings at T
A
= 25°C
Parameter
DC Forward Current
[1]
Peak Pulsing Current
[2]
Power Dissipation
LED Junction Temperature
Operating Ambient Temperature Range
Storage Temperature Range
Notes:
1. DC forward current – derate linearly based on Figure 5.
2. Pulse condition duty factor = 10%, Frequency = 1kHz
ASMT-Mx6x / ASMT-MxHx
150
300
525
145
-40 to +120
-40 to +120
Units
mA
mA
mW
°C
°C
°C
Optical Characteristics (T
A
= 25°C)
Correlated Color Temperature,
CCT (Kelvin)
Part Number
ASMT-MW6x
ASMT-MY6x
ASMT-MWHx
ASMT-MYHx
Notes:
1.
Viewing Angle 2θ½
[1]
(Degrees)
Typ
110
110
120
120
Luminous Efficiency
(lm/W)
Typ
57
48
48
38
Color
Cool White
Warm White
Cool White Diffused
Warm White Diffused
Min
4000
2600
4000
2600
Max
10000
4000
10000
4000
T
½ is the off-axis angle where the luminous intensity is ½ the peak intensity.
Electrical Characteristic (T
A
= 25°C)
Forward Voltage V
F
(Volts) @ I
F
= 150mA
Dice Type
InGaN
Reverse Voltage V
R
(Volts)
Max.
4.0
Thermal Resistance R
T
j-ms
(
°
C/W)
[1]
Typ.
27
Typ.
3.5
Max.
5
Note:
1. R
T
j-ms
is Thermal Resistance from LED junction to metal slug.
3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
380
430
480
530
580
630
WAVELENGTH - nm
200
COOL WHITE DIFFUSED
WARM WHITE DIFFUSED
COOL WHITE
WARM WHITE
175
150
FORWARD CURRENT - mA
RELATIVE INTENSITY
125
100
75
50
25
680
730
780
0
0.00
0.50
1.00
1.50
2.00
2.50
FORWARD VOLTAGE - V
3.00
3.50
4.00
Figure 1. Relative Intensity vs. Wavelength
Figure 2. Forward Current vs Forward Voltage
RELATIVE LUMINOUS FLUX (Φv) - lm
RELATIVE INTENSITY
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
20
40
60
80
100
120
140
160
180
200
0.0
-90
-70
-50
-30
COOL WHITE DIFFUSED
WARM WHITE DIFFUSED
COOL WHITE
WARM WHITE
-10
10
30
50
70
90
MONO PULSE CURRENT - mA
OFF-AXIS ANGLE(°)
Figure 3. Relative Luminous Flux vs. Mono Pulse Current
Figure
4.
Radiation Pattern
180
150
120
90
60
30
0
R
JA
= 140°C/W
R
JA
= 120°C/W
R
JA
= 100°C/W
I
F
MAX FORWARD CURRENT - mA
0
10
20
30
40
50
60
T
A
AMBIENT TEMPERATURE - °C
70
80
90
Figure 5. Maximum forward current vs. ambient temperature. Derated
based on T
J
MAX = 145°C, R
T
JA
= 100°C/W, 120°C/W and 140°C/W
4
10.70 ± 0.10
10 to 30 SEC.
255 - 260 °C
3°C/SEC. MAX.
-6°C/SEC. MAX.
17.00 ± 0.20
8.40 ± 0.10
TEMPERATURE
217 °C
200 °C
150 °C
3 °C/SEC. MAX.
1.00 ± 0.10
60 - 120 SEC.
100 SEC. MAX.
3.1 ± 0.10
TIME
(Acc. to J-STD-020C)
5.08 ± 0.10
Figure 6. Recommended Reflow Soldering
Figure 7. Recommended soldering land pattern
350
100
90
80
RELATIVE FORWARD VOLTAGE SHIFT (mV)
RELATIVE LOP (%)
300
250
200
150
100
50
0
-50
-100
-150
-200
-250
-300
-40
70
60
50
40
30
20
10
0
½W COOL WHITE
½W WARM WHITE
-15
10
35
TEMPERATURE - °C
60
85
25
35
45
55
65
75 85
95 105
JUNCTION TEMPERATURE (°C)
115 125
135 145
Figure 8. Temperature vs. relative forward voltage shift
Figure 9. Relative LOP vs Junction Temperature for InGaN Devices
Flux
Bin
Limit
[1]
(For reference only) [X
1
X
2
]
Flux (lm) at 150mA
Bin
A
B
C
D
E
F
G
H
Min
5.5
7.0
9.0
11.5
15.0
19.5
25.5
33.0
Max
7.0
9.0
11.5
15.0
19.5
25.5
33.0
43.0
Tolerance for each bin limits is ±10 %
5
Microchip MCU
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