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M29W160FB7AZA6E6

Description
Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48
Categorystorage    storage   
File Size1MB,57 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

M29W160FB7AZA6E6 Overview

Flash, 1MX16, 70ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-48

M29W160FB7AZA6E6 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionTFBGA, BGA48,6X8,32
Reach Compliance Codecompliant
Maximum access time70 ns
Other featuresBOTTOM BOOT BLOCK
Spare memory width8
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B48
JESD-609 codee1
length8 mm
memory density16777216 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size1,2,1,31
Number of terminals48
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA48,6X8,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Filter levelAEC-Q100
Maximum seat height1.2 mm
Department size16K,8K,32K,64K
Maximum standby current0.0001 A
Maximum slew rate0.01 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
switch bitYES
typeNOR TYPE
width6 mm
Base Number Matches1
M29W160FT M29W160FB
M29W320FT M29W320FB
16 Mbit or 32 Mbit (x 8 or x 16, boot block)
3 V supply Flash memory
Features
Supply voltage
– V
CC
= 2.5 V to 3.6 V (access time: 80 ns) or
2.7 to 3.6 V (access time: 70 ns) for
Program, Erase and Read
– V
PP
= 12 V for Fast Program (optional,
available in the M29W320FT/B only)
Access time: 70, 80 ns
Programming time
– 10
μs
per byte/word typical
Memory organization:
– M29W160FT/B: 35 blocks including 1 boot
block (top or bottom location), 2 parameter
blocks and 32 main blocks
– M29W320FT: 67 blocks including 1 boot
block (top or bottom location), 2 parameter
blocks and 64 main blocks
Program/Erase controller
– Embedded byte/word program algorithms
Erase Suspend and Resume modes
– Read and Program another block during
Erase Suspend
Unlock Bypass Program command
– Faster production/batch programming
V
PP
/WP pin for Fast program and Write Protect
(available in the M29W320FT/B only)
Temporary block unprotection mode
Common Flash interface
– 64 bit security code
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
FBGA
TSOP48 (N)
12 x 20 mm
TFBGA48 (ZA)
6 x 8 mm
Electronic signature
– Manufacturer code: 0020h
– Top device codes
M29W160FT: 22C4h
M29W320FT: 22CAh
– Bottom device codes
M29W160FB: 2249h
M29W320FB: 22CBh
Automotive device grade 3:
– Temperature:
40 to 125 °C
– Automotive grade certified
TSOP48 package is RoHS compliant
November 2008
208011-04
1/57
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