S E M I C O N D U C T O R
HGTP15N40C1, 40E1, 50C1, 50E1,
HGTH20N40C1, 40E1, 50C1, 50E1
15A, 20A,
400V and 500V N-Channel IGBTs
Packages
HGTH-TYPES JEDEC TO-218AC
EMITTER
COLLECTOR
COLLECTOR
(FLANGE)
GATE
April 1995
Features
• 15A and 20A, 400V and 500V
• V
CE(ON)
2.5V
• T
FI
1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode
Applications
• Power Supplies
• Motor Drives
• Protection Circuits
HGTP-TYPES JEDEC TO-220AB
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
Description
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1,
HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
HGTH20N40C1
HGTH20N40E1
HGTH20N50C1
HGTH20N50E1
HGTP15N40C1
HGTP15N40E1
HGTP15N50C1
HGTP15N50E1
PACKAGE
TO-218AC
TO-218AC
TO-218AC
TO-218AC
TO-220AB
TO-220AB
TO-220AB
TO-220AB
BRAND
G20N40C1
G20N40E1
G20N50C1
G20N50E1
G15N40C1
G15N40E1
G15N50C1
G15N50E1
E
G
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number.
T
C
= +25
o
C, Unless Otherwise Specified
HGTH20N40C1 HGTH20N50C1
HGTH20N40E1 HGTH20N50E1
400
500
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .V
CES
400
500
Collector-Gate Voltage R
GE
= 1MΩ. . . . . . . . . . . . . . . . V
CGR
-5
-5
Reverse Collector-Emitter Voltage . . . . . . . . . . . . V
CES
(rev.)
±20
±20
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
20
20
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . I
C
35
35
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
o
100
100
Power Dissipation at T
C
= +25 C . . . . . . . . . . . . . . . . . . . P
D
0.8
0.8
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . .
-55 to +150
Operating and Storage Junction Temperature Range . . . T
J
, T
STG
-55 to +150
Absolute Maximum Ratings
HGTP15N40C1
HGTP15N40E1
400
400
-5
±20
15
35
75
0.6
-55 to +150
HGTP15N50C1
HGTP15N50E1 UNITS
500
V
500
V
-5
V
±20
V
15
A
35
A
75
W
0.6
W/
o
C
o
C
-55 to +150
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1995
File Number
2174.3
3-61
Specifications HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
LIMITS
HGTH20N40C1, E1,
HGTP15N40C1, E1
PARAMETERS
Collector-Emitter Breakdown
Voltage
Gate Threshold Voltage
Zero-Gate Voltage Collector
Current
SYMBOL
BV
CES
V
GE(TH)
I
CES
TEST CONDITIONS
I
C
= 1mA, V
GE
= 0
V
GE
= V
CE
, I
C
= 1mA
V
CE
= 400V, T
C
= +25
o
C
V
CE
= 500V, T
C
= +25
o
C
V
CE
= 400V, T
C
= +125
o
C
V
CE
= 500V, T
C
= +125
o
C
Gate-Emitter Leakage Current
Reverse Collector-Emitter
Leakage Current
Collector-Emitter on Voltage
I
GES
I
CE
V
CE(ON)
V
GE
=
±20V,
V
CE
= 0
R
GE
= 0Ω, V
EC
= 5V
I
C
= 20A, V
GE
= 10V
I
C
= 35A, V
GE
= 20V
Gate-Emitter Plateau Voltage
On-State Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
40E1, 50E1
40C1, 50C1
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation =
W
OFF
x Frequency)
40E1, 50E1
40C1, 50C1
Thermal Resistance
Junction-to-Case
R
θJC
HGTH, HGTM
HGTP
-
-
W
OFF
I
C
= 10A, V
CE(CLP)
= 300V,
L = 25µH, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 25Ω
1810 (Typ)
1070 (Typ)
1.25
1.67
-
-
1.25
1.67
µJ
µJ
o
C/W
o
C/W
HGTH20N50C1, E1,
HGTP15N50C1, E1
MIN
500
MAX
-
UNITS
V
MIN
400
MAX
-
2.0
-
-
-
-
-
-
4.5
250
-
1000
-
100
-5
2.0
-
-
-
-
-
-
4.5
-
250
-
1000
100
-5
V
µA
µA
µA
µA
nA
mA
-
-
-
-
-
-
-
2.5
3.2
6 (Typ)
33 (Typ)
50
50
400
-
-
-
-
-
-
-
2.5
3.2
6 (Typ)
33 (Typ)
50
50
400
V
V
V
nC
ns
ns
ns
V
GEP
Q
G(ON)
t
D(ON)I
t
RI
t
D(OFF)I
t
FI
I
C
= 10A, V
CE
= 10V
I
C
= 10A, V
CE
= 10V
I
C
= 20A, V
CE(CLP)
= 300V,
L = 25µH, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 25Ω
680 (Typ)
400
1000
500
680 (Typ)
400
1000
500
ns
ns
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
3-62
HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
Typical Performance Curves
40
V
GE
= 10V, R
GEN
= R
GS
= 50Ω
I
CE
, COLLECTOR CURRENT (A)
RATED POWER DISSIPATION (%)
-50
-25
0
+25
+50 +75 +100 +125 +150 +175
(
o
C)
35
30
25
20
15
10
5
0
-75
100
80
60
40
20
0
+25
+50
+75
+100
+125
o
+150
T
J
, JUNCTION TEMPERATURE
T
C
, CASE TEMPERATURE ( C)
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. R
G
= 25Ω,
V
GE
= 0V ARE THE MIN. ALLOWABLE VALUES
FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERATING
CURVE
NORMALIZED GATE THRESHOLD VOLTAGE
35
V
GE
= V
CE
, I
C
= 1mA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
I
CE
, COLLECTOR CURRENT (A)
30
25
20
15
10
PULSE TEST, V
CE
= 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
+25
o
C
5
+125
o
C
0
0
2.5
5.0
-40
o
C
-50
0
+50
+100
+150
7.5
10.0
T
C
, JUNCTION TEMPERATURE (
o
C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT-
AGE vs JUNCTION TEMPERATURE
T
C
= +25
o
C
35
V
GE
= 20V
I
CE
, COLLECTOR CURRENT (A)
30
25
20
15
10
5
0
0
1
2
3
4
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
V
GE
= 4V
V
GE
= 10V
V
GE
= 8V
V
GE
= 6V
V
GE
= 7V
I
CE
, COLLECTOR CURRENT (A)
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
35
30
25
20
15
10
5
0
0
1
2
3
4
V
CE(ON)
, COLLECTOR-TO-EMITTER VOLTAGE (V)
+25
o
C
PULSE TEST, V
GE
= 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
V
GE
= 5V
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
3-63
HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
Typical Performance Curves
(Continued)
2700
V
CE(ON)
, COLLECTOR-EMITTER ON VOLTAGE (V)
f = 1MHz
3.00
2250
C, CAPACITANCE (pF)
2.75
I
C
= 20A, V
GE
= 10V
2.50
I
C
= 20A, V
GE
= 15V
2.25
1800
CISS
1350
900
2.00
1.75
I
C
= 10A, V
GE
= 10V
450
CRSS
0
COSS
0
10
20
30
40
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
50
1.50
+25
I
C
= 10A, V
GE
= 15V
+50
+75
+100
+125
o
+150
T
J
, JUNCTION TEMPERATURE ( C)
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
FIGURE 8. TYPICAL V
CE(ON)
vs TEMPERATURE
400
I
C
= 20A, V
GE
= 10V, V
CL
= 300V
L = 25µH, R
G
= 25Ω
t
D(OFF)I
, SWITCHING TIME (ns)
V
GE
300
V
CE
200
I
C
W
OFF
=
∫
I
C
*
V
CE
dt
100
0
+25
+50
+75
+100
+125
T
J
, JUNCTION TEMPERATURE (
o
C)
+150
FIGURE 9. TYPICAL TURN-OFF DELAY TIME
FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
800
700
t
FI
, SWITCHING TIME (ns)
600
40E1/50E1
500
400
40C1/50C1
300
200
100
0
+25
I
C
= 10A, V
GE
= 10V, V
CL
= 300V
L = 25µH, R
G
= 25Ω
t
FI
, SWITCHING TIME (ns)
800
700
600
500
400
40C1/50C1
300
200
100
0
+25
40E1/50E1
I
C
= 20A, V
GE
= 10V, V
CL
= 300V
L = 25µH, R
G
= 25Ω
+50
+75
+100
+125
(
o
C)
+150
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 11. TYPICAL FALL TIME (I
C
= 10A)
FIGURE 12. TYPICAL FALL TIME (I
C
= 20A)
3-64
HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
Typical Performance Curves
(Continued)
1000
W
OFF
, TURN-OFF ENERGY LOSS (µJ)
900
800
700
600
500
400
300
200
100
0
+25
10A, 40E1/50E1
20A, 40C1/50C1
L = 25µH, R
G
= 25Ω
20A, 40E1/50E1
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
V
GE
= 10V, V
CE(CLP)
= 300V
500
10
BV
CES
V
CC
= BV
CES
375
R
L
= 25Ω
I
G(REF)
= 0.76mA
V
GE
= 10V
GATE-
EMITTER
VOLTAGE
V
CC
= 0.25BV
CES
250
NOTE:
FOR TURN-OFF GATE CURRENTS IN
EXCESS OF 3mA. V
CE
TURN-OFF IS
NOT ACCURATELY REPRESENTED
BY THIS NORMALIZATION.
COLLECTOR-EMITTER VOLTAGE
0
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
20
I
G(REF)
I
G(ACT)
TIME (µs)
80
I
G(REF)
I
G(ACT)
0
4
8
V
GE
, GATE-EMITTER VOLTAGE (V)
6
125
10A, 40C1/50C1
2
FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT. (REFER TO APPLICA-
TION NOTES AN7254 AND AN7260 ON THE USE
OF NORMALIZED SWITCHING WAVEFORMS)
Test Circuit
R
L
= 4Ω
L = 25µH
V
CC
V
CE(CLP)
=
300V
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GEN
= 50Ω
80V
20V
0V
R
GE
= 50Ω
FIGURE 15. INDUCTIVE SWITCHING TEST CIRCUIT
3-65
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