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MC74VHC1G03
Single 2−Input NOR Gate
with Open Drain Output
The MC74VHC1G03 is an advanced high speed CMOS 2−input
NOR gate with an open drain output fabricated with silicon gate
CMOS technology.
The internal circuit is composed of multiple stages, including an
open drain output which provides the capability to set output
switching level. This allows the MC74VHC1G03 to be used to
interface 5 V circuits to circuits of any voltage between V
CC
and 7 V
using an external resistor and power supply.
The MC74VHC1G03 input structure provides protection when
voltages up to 7 V are applied, regardless of the supply voltage.
Features
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MARKING
DIAGRAMS
5
SC−88A / SOT−353 / SC−70
DF SUFFIX
CASE 419A
1
TSOP−5 / SOT−23 / SC−59
DT SUFFIX
CASE 483
VP M
G
G
M
•
•
•
•
•
•
High Speed: t
PD
= 3.6 ns (Typ) at V
CC
= 5 V
Low Internal Power Dissipation: I
CC
= 1
mA
(Max) at T
A
= 25°C
Power Down Protection Provided on Inputs
Pin and Function Compatible with Other Standard Logic Families
Chip Complexity: FETs = 62
Pb−Free Packages are Available
VP M
G
G
VP
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
5
OVT
V
CC
IN B
1
PIN ASSIGNMENT
1
IN B
IN A
GND
OUT Y
V
CC
IN A
2
2
3
GND
3
4
OUT Y
4
5
FUNCTION TABLE
Figure 1. Pinout (Top View)
Inputs
A
IN A
IN B
≥
1
L
L
H
H
B
L
H
L
H
Output
Y
Z
L
L
L
OUT Y
Figure 2. Logic Symbol
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 2007
1
January, 2007 − Rev. 14
Publication Order Number:
MC74VHC1G03/D
MC74VHC1G03
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
q
JA
T
L
T
J
T
STG
MSL
F
R
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
CC
and GND
Power Dissipation in Still Air at 85°C
Thermal Resistance
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Storage Temperature Range
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
Above V
CC
and Below GND at 125°C (Note 5)
SC70−5/SC−88A
TSOP−5
SC70−5/SC−88A (Note 1)
TSOP−5
V
OUT
< GND; V
OUT
> V
CC
V
CC
= 0
High or Low State
Characteristics
Value
−0.5 to +7.0
−0.5 to +7.0
−0.5 to 7.0
−0.5 to V
CC
+ 0.5
−20
+20
+25
+50
150
200
350
230
260
)150
*65
to
)150
Level 1
UL 94 V−0 @ 0.125 in
> 2000
> 200
N/A
$500
V
Unit
V
V
V
mA
mA
mA
mA
mW
°C/W
°C
°C
°C
I
LATCHUP
Latchup Performance
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
t
r
, t
f
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
V
CC
= 3.3 V
±
0.3 V
V
CC
= 5.0 V
±
0.5 V
Characteristics
Min
2.0
0.0
0.0
−55
0
0
Max
5.5
5.5
7.0
+125
100
20
Unit
V
V
V
°C
ns/V
Junction
Temperature
°C
80
90
100
110
120
130
140
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
T
J
= 130°C
T
J
= 120°C
T
J
= 100°C
T
J
= 110°C
T
J
= 90°C
T
J
= 80°C
100
TIME, YEARS
1
1
10
1000
Figure 3. Failure Rate vs. Time Junction Temperature
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2
MC74VHC1G03
DC ELECTRICAL CHARACTERISTICS
V
CC
Symbol
V
IH
Parameter
Minimum High−Level
Input Voltage
V
IL
Maximum Low−Level
Input Voltage
Test Conditions
(V)
2.0
3.0
4.5
5.5
2.0
3.0
4.5
5.5
V
IN
= V
IH
or V
IL
I
OL
= 50
mA
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
I
LKG
I
IN
I
CC
I
OFF
Z−State Output
Leakage Current
Maximum Input
Leakage Current
Maximum Quiescent
Supply Current
Power Off−Output
Leakage Current
V
IN
= V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
V
OUT
= 5.5 V
V
IN
= 5.5 V
2.0
3.0
4.5
3.0
4.5
5.5
0 to
5.5
5.5
0
0.0
0.0
0.0
Min
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
0.1
0.1
0.1
0.36
0.36
$5
±0.1
1.0
0.25
T
A
= 25°C
Typ
Max
T
A
≤
85°C
Min
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
0.1
0.1
0.1
0.44
0.44
$10
±1.0
20
2.5
Max
−55
≤
T
A
≤
125°C
Min
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
0.1
0.1
0.1
0.52
0.52
$10
±1.0
40
5
mA
mA
mA
mA
Max
Unit
V
V
V
OL
Maximum Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
V
Î Î Î Î Î Î Î Î
Î
Î
Î
Î Î Î Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
Î
Î
ÎÎÎ Î Î Î Î
Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î Î
Î Î Î Î Î Î Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î ÎÎ Î Î Î
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
Î
Î
ÎÎÎ Î Î Î Î Î Î
Î
Î
Î Î Î Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎ Î Î Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
Î Î Î Î
Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î Î
Î Î Î Î Î Î Î
Î
Î
Î
ÎÎÎÎÎÎ Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS
Input t
r
= t
f
= 3.0 ns
Symbol
t
PZL
Parameter
Test Conditions
T
A
= 25°C
Typ
5.6
8.1
3.6
5.1
8.1
5.1
4
T
A
≤
85°C
−55
≤
T
A
≤
125°C
Min
Max
Min
Max
7.9
11.4
5.5
7.5
Min
Max
Unit
ns
Maximum Output
Enable Time,
Input A or B to Y
V
CC
= 3.3
±
0.3 V
R
L
= R
I
= 500
W
V
CC
= 5.0
±
0.5 V
R
L
= R
I
= 500
W
V
CC
= 3.3
±
0.3 V
R
L
= R
I
= 500
W
C
L
= 15 pF
C
L
= 50 pF
C
L
= 15 pF
C
L
= 50 pF
9.5
13.0
6.5
8.5
11.0
15.5
8.0
10.0
t
PLZ
Maximum Output
Disable Time
C
L
= 50 pF
11.4
7.5
10
13.0
8.5
10
15.5
10.0
10
ns
V
CC
= 5.0
±
0.5 V
R
L
= R
I
= 500
W
C
L
= 50 pF
C
IN
Maximum Input
Capacitance
pF
Typical @ 25°C, V
CC
= 5.0V
18
C
PD
Power Dissipation Capacitance (Note 6)
pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC2
f
in
+ I
CC
V
CC
.
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3
MC74VHC1G03
V
CC
A
B
Y
OVT
V
CC
− 7 V
A or B
R
L
50%
GND
t
PZL
50% V
CC
t
PLZ
HIGH
IMPEDANCE
VOL +0.3 V
V
CC
Figure 4. Output Voltage Mismatch Application
V
CC
Figure 5. Switching Waveforms
PULSE
GENERATOR
R
T
R
1
DUT
C
L
R
L
V
CC
x 2
C
L
= 50 pF equivalent (Includes jig and probe capacitance)
R
L
= R
1
= 500
W
or equivalent
R
T
= Z
OUT
of pulse generator (typically 50
W)
Figure 6. Test Circuit
V
CC
MC74VHC1G01
A
B
MC74VHC1G03
C
D
3
E = (A
•
B) + (C+D)
6
A
B
GTL
2.2 kW
A
2
B
1
5
R
LED
V
CC
V
CC
MC74VHC1G03
3.3 V
1.5 V
220
W
Figure 7. Complex Boolean Functions
Figure 8. LED Driver
Figure 9. GTL Driver
ORDERING INFORMATION
Device
MC74VHC1G03DFT1
MC74VHC1G03DFT1G
MC74VHC1G03DFT2
MC74VHC1G03DFT2G
MC74VHC1G03DTT1
MC74VHC1G03DTT1G
Package
SC70−5 / SC−88A / SOT−353
SC70−5 / SC−88A / SOT−353
(Pb−Free)
SC70−5 / SC−88A / SOT−353
SC70−5 / SC−88A / SOT−353
(Pb−Free)
SOT23−5 / TSSOP−5 / SC59−5
SOT23−5 / TSSOP−5 / SC59−5
(Pb−Free)
3000/Tape & Reel
Shipping
†
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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