HYM71V65M1601TX-10S datasheet, PDF

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HYM71V65M1601TX-10S: DescriptionSynchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144; Categorystorage storage; File Size327KB，14 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HYM71V65M1601TX-10S Overview

Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144

HYM71V65M1601TX-10S Parametric

Parameter Name	Attribute value
Parts packaging code	SODIMM
package instruction	DIMM, DIMM144,32
Contacts	144
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-XSMA-N144
memory density	1073741824 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	144
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM144,32
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum standby current	0.012 A
Maximum slew rate	2.32 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.8 mm
Terminal location	SINGLE
Base Number Matches	1

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16Mx64 bits

PC100 SDRAM SO DIMM

based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh

HYM71V65M1601 X-Series

DESCRIPTION

The Hyundai HYM71V65M1601 X-Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of

eight 8Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP

package on a 144pin glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each

SDRAM are mounted on the PCB.

The HYM71V65M1601 X-Series are Small Outline Dual In-line Memory Modules suitable for easy interchange and

addition of 128Mbytes memory. The HYM71V65M1601 X-Series are offering fully synchronous operation referenced to a

positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths

are internally pipelined to achieve very high bandwidth.

FEATURES

•

PC100MHz support

•

144pin SDRAM SO DIMM

•

Serial Presence Detect with EEPROM

•

1.25” (31.75mm) Height PCB with Double Sided

components

•

Single 3.3

0.3V power supply

•

All devices pins are compatible with LVTTL interface

•

Data mask function by DQM

•

SDRAM internal banks : four banks

•

Module bank : two physical bank

•

Auto refresh and self refresh

•

4096 refresh cycles / 64ms

•

Programmable Burst Length and Burst Type

-. 1, 2, 4, 8 or Full Page for Sequential Burst

-. 1, 2, 4 or 8 for Interleave Burst

•

Programmable /CAS Latency

-. 2, 3 Clocks

ORDERING INFORMATION

PART NO.

HYM71V65M1601TX-8

HYM71V65M1601TX-10P

HYM71V65M1601TX-10S

HYM71V65M1601LTX-8

HYM71V65M1601LTX-10P

HYM71V65M1601LTX-10S

MAX.

FREQUENCY

125MHz

100MHz

4 Banks

125MHz

100MHz

Low Power

TSOP-II

Gold

Normal

INTERNAL

BANK

REF.

POWER

SDRAM

PACKAGE

PLATING

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume

any responsibility for use of circuits described. No patent licenses are implied.

Rev. 1.1/Dec.99

Hyundai MicroElectronics

HYM71V65M1601TX-10S Related Products

	HYM71V65M1601TX-10S	HYM71V65M1601LTX-10S	HYM71V65M1601TX-8	HYM71V65M1601LTX-8	HYM71V65M1601LTX-10P	HYM71V65M1601TX-10P
Description	Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144
Parts packaging code	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM
package instruction	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32
Contacts	144	144	144	144	144	144
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz	100 MHz	125 MHz	125 MHz	100 MHz	100 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XSMA-N144	R-XSMA-N144	R-XSMA-N144	R-XSMA-N144	R-XSMA-N144	R-XSMA-N144
memory density	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64	64	64	64	64
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	144	144	144	144	144	144
word count	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	16MX64	16MX64	16MX64	16MX64	16MX64	16MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096
self refresh	YES	YES	YES	YES	YES	YES
Maximum standby current	0.012 A	0.012 A	0.012 A	0.012 A	0.012 A	0.012 A
Maximum slew rate	2.32 mA	2.32 mA	2.32 mA	2.32 mA	2.32 mA	2.32 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE

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