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A3212EUA

Description
Analog Circuit, 1 Func, BICMOS, PSIP3, ULTRA MINI, SIP-3
CategoryAnalog mixed-signal IC    The signal circuit   
File Size382KB,12 Pages
ManufacturerAllegro
Websitehttp://www.allegromicro.com/
Download Datasheet Parametric View All

A3212EUA Overview

Analog Circuit, 1 Func, BICMOS, PSIP3, ULTRA MINI, SIP-3

A3212EUA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSIP
package instructionSIP,
Contacts3
Reach Compliance Codecompliant
Other featuresREVERSE BATTERY PROTECTION
Analog Integrated Circuits - Other TypesANALOG CIRCUIT
JESD-30 codeR-PSIP-T3
JESD-609 codee0
length4.105 mm
Number of functions1
Number of terminals3
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeSIP
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)240
Certification statusNot Qualified
Maximum seat height5.26 mm
Maximum supply voltage (Vsup)24 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)12 V
surface mountNO
technologyBICMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch1.27 mm
Terminal locationSINGLE
Maximum time at peak reflow temperature30
width1.52 mm
Base Number Matches1
A3212
Package Suffix ‘LH’ Pinning
(SOT23W)
MICROPOWER, ULTRA-SENSITIVE
HALL-EFFECT SWITCH
The A3212 integrated circuit is an ultra-sensitive, pole independent Hall-
effect switch with a latched digital output. This sensor is especially suited for
operation in battery-operated, hand-held equipment such as cellular and cordless
telephones, pagers, and palmtop computers. A 2.5 volt to 3.5 volt operation and a
unique clocking scheme reduce the average operating power requirements to less
than 15
µW
with a 2.75 volt supply.
Unlike other Hall-effect switches, either a north or south pole of suf
cient
strength will turn the output on; in the absence of a magnetic
eld, the output
is off. The polarity independence and minimal power requirement allow these
devices to easily replace reed switches for superior reliability and ease of manu-
facturing, while eliminating the requirement for signal conditioning.
Improved stability is made possible through chopper stabilization (dynamic
offset cancellation), which reduces the residual offset voltage normally caused
by device overmolding, temperature dependencies, and thermal stress.
This device includes on a single silicon chip a Hall-voltage generator,
small-signal amplifier, chopper stabilization, a latch, and a MOSFET output.
Advanced BiCMOS processing is used to take advantage of low-voltage and
low-power requirements, component matching, very low input-offset errors, and
small component geometries.
Three package styles provide a magnetically optimized package for most ap-
plications. Package suffixes 'EH' and ‘LH’ are for miniature low-profile (lead-
less and leaded, respectively) surface-mount packages while suffix ‘UA’ is for
a three-lead SIP for through-hole mounting. Each package is available in a lead
(Pb) free version (suffix,
–T)
with 100% matte tin plated leadframe.
Data Sheet
27622.61D
3
V
DD
1
2
GROUND
Dwg. PH-016-1
Pinning is shown viewed from branded side.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
DD
..............................
5 V
Magnetic Flux Density, B ..........
Unlimited
Output Off Voltage, V
OUT
......................
5 V
Output Current, I
OUT
...........................
1 mA
Junction Temperature, T
J
................
+170°C
Operating Temperature, T
A
Range 'E-' ....................
-40°C to +85°C
Range 'L-' ..................
-40°C to +150°C
Storage Temperature Range,
T
S
..............................
-65°C to +170°C
Caution: These CMOS devices have input
static protection (Class 3) but are still sus-
ceptible to damage if exposed to extremely
high static electrical charges.
OUTPUT
SUPPLY
FEATURES
Micropower Operation
Operation with North or South Pole
2.5 V to 3.5 V Battery Operation
Chopper Stabilized
Superior Temperature Stability
Extremely Low Switch-Point Drift
Insensitive to Physical Stress
ESD Protected to 5 kV
Solid-State Reliability
Small Size
Easily Manufacturable with Magnet Pole Independence
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