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M1MA152WA

Description
0.1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size111KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

M1MA152WA Overview

0.1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE

M1MA152WA Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
ECCN codeEAR99
Base Number Matches1
M1MA151WA / M1MA152WA
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
ANODE
3
S
3
2
1
2
Surface Mount Switching Diode
L
3
Top View
1
B
D
G
J
K
2
CATHODE
1
C
H
MAXIMUM RATINGS
(TA = 25°C)
Rating
Reverse Voltage
M1MA151WA
M1MA152WA
Peak Reverse Voltage
M1MA151WA
M1MA152WA
Forward Current
Single
Dual
Peak Forward Current
Single
Dual
Peak Forward Surge Current
Single
Dual
IFSM(1)
IFM
IF
VRM
Symbol
VR
Value
40
80
40
80
100
150
225
340
500
750
mAdc
mAdc
mAdc
Vdc
Unit
Vdc
SC-59
Dim
A
B
C
D
G
H
J
K
L
S
Min
2.70
1.30
1.00
0.35
1.70
0.00
0.10
0.20
1.25
2.25
Max
3.10
1.70
1.30
0.50
2.30
0.10
0.26
0.60
1.65
3.00
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
PD
TJ
Tstg
Max
200
150
– 55 to + 150
Unit
mW
°C
°C
All Dimension in mm
DEVICE MARKING
M1MA151WA = MN; M1MA152WA = MO
ELECTRICAL CHARACTERISTICS
(TA = 25°C)
Characteristic
Reverse Voltage Leakage Current
M1MA151WA
M1MA152WA
Forward Voltage
Reverse Breakdown Voltage
M1MA151WA
M1MA152WA
Diode Capacitance
Reverse Recovery Time
1. t = 1 SEC
2. trr Test Circuit
CD
trr(2)
VR = 0, f = 1.0 MHz
IF = 10 mA, VR = 6.0 V,
RL = 100
Ω,
Irr = 0.1 IR
VF
VR
Symbol
IR
Condition
VR = 35 V
VR = 75 V
IF = 100 mA
IR = 100
µA
Min
40
80
Max
0.1
0.1
1.2
15
10
pF
ns
Vdc
Vdc
Unit
µAdc
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2

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Description 0.1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
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