Discontinued (9/98 - last order; 3/99 last ship)
IBM01161651M x 1612/8, 5.0V, EDOMMDD61DSU-001015031. IBM0116165P1M x 1612/8, 3.3V, EDO, LP, SRMMDD61DSU-001015031. IBM0116165M1M x 1612/8, 5.0V, EDO, LP, SRMMDD61DSU-001015031. IBM0116165B1M x 1612/8, 3.3V, EDOMMDD61DSU-001015031.
IBM0116165 IBM0116165M
IBM0116165B IBM0116165P
1M x 16 12/8 EDO DRAM
Features
• 1,048,576 word by 16 bit organization
• Single 3.3V
±
0.3V or 5.0V
±
0.5V power supply
• Standard Power (SP) and Low Power (LP)
• 4096 Refresh Cycles
- 64 ms Refresh Rate (SP version)
- 256 ms Refresh Rate (LP version)
• High Performance:
-50
t
RAC
RAS Access Time
t
CAC
CAS Access Time
t
AA
t
RC
Column Address Access Time
Cycle Time
50
13
25
84
20
-60
60
15
30
104
25
Units
ns
ns
ns
ns
ns
• Low Power Dissipation
- Active (max) - 55 mA / 50 mA
- Standby: TTL Inputs (max) - 1.0 mA
- Standby: CMOS Inputs (max)
- 1.0 mA (SP version)
- 0.1 mA (LP version)
- Self Refresh (LP version only)
- 200µA (3.3 Volt)
- 300µA (5.0 Volt)
• Extended Data Out (Hyper Page) Mode
• Dual CAS Byte Read/Write
• Read-Modify-Write
• RAS Only and CAS before RAS Refresh
• Hidden Refresh
• Package: TSOP-II 50/44 (400mil x 825mil)
SOJ 42/42 (400mil)
t
HPC
EDO (Hyper Page) Mode Cycle Time
Description
The IBM0116165 is a dynamic RAM organized
1,048,576 words by 16 bits, which has a very low
“sleep mode” power consumption option. These
devices are fabricated in IBM’s advanced 0.5µm
CMOS silicon gate process technology. The circuit
and process have been carefully designed to pro-
vide high performance, low power dissipation, and
high reliability. The devices operate with a single
3.3V
±
0.3V or 5.0V
±
0.5V power supply. The 20
addresses required to access any bit of data are
multiplexed (12 are strobed with RAS, 8 are strobed
with CAS).
Pin Assignments
(Top View)
50/44 TSOP
V
CC
IO0
IO1
IO2
IO3
V
CC
IO4
IO5
IO6
IO7
NC
NC
NC
WE
RAS
A11
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
11
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
36
35
34
33
32
31
30
29
28
27
26
V
SS
IO15
IO14
IO13
IO12
V
SS
IO11
IO10
IO9
IO8
NC
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
V
CC
IO0
IO1
IO2
IO3
V
CC
IO4
IO5
IO6
IO7
NC
NC
WE
RAS
A11
A10
A0
A1
A2
A3
V
CC
Pin Description
42/42 SOJ
RAS
V
SS
IO15
IO14
IO13
IO12
V
SS
IO11
IO10
IO9
IO8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
Row Address Strobe
L/U Column Address Strobe
Read/Write Input
Address Inputs
Output Enable
Data Input/Output
Power (+3.3V or +5.0V)
Ground
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
LCAS / UCAS
WE
A0 - A11
OE
I/O0 - I/O15
V
CC
V
SS
28H4723
SA14-4225-06
Revised 4/97
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 31
Discontinued (9/98 - last order; 3/99 last ship)
IBM0116165 IBM0116165M
IBM0116165B IBM0116165P
1M x 16 12/8 EDO DRAM
Absolute Maximum Ratings
Rating
Symbol
V
CC
V
IN
V
OUT
T
OPR
T
STG
P
D
I
OUT
Parameter
3.3 Volt Device
Power Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Storage Temperature
Power Dissipation
Short Circuit Output Current
-0.5 to +4.6
-0.5 to min (V
CC
+0.5, 4.6)
-0.5 to min (V
CC
+0.5, 4.6)
0 to +70
-55 to +150
1.0
50
5.0 Volt Device
-1.0 to +7.0
-0.5 to min (V
CC
+0.5, 7.0)
-0.5 to min (V
CC
+0.5, 7.0)
0 to +70
-55 to +150
1.0
50
V
V
V
°C
°C
W
mA
1
1
1
1
1
1
1
Units
Notes
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Recommended DC Operating Conditions
3.3 Volt Device
Symbol
V
CC
V
IH
V
IL
Parameter
Min.
Supply Voltage
Input High Voltage
Input Low Voltage
3.0
2.0
-0.5
Typ.
3.3
—
—
(T
A
= 0 to 70˚C)
5.0 Volt Device
Units
Notes
1
1, 2
1, 2
Max.
3.6
V
CC
+ 0.5
0.8
Min.
4.5
2.4
-0.5
Typ.
5.0
—
—
Max.
5.5
V
CC
+ 0.5
0.8
V
V
V
1. All voltages referenced to V
SS
.
2. V
IH
may overshoot to V
CC
+ 1.2V for pulse widths of
≤
4.0ns with 3.3 Volt, or V
CC
+ 2.0V for pulse widths of
≤
4.0ns (or V
CC
+ 1.0V
for
≤
8.0ns) with 5.0 Volt. Additionally, V
IL
may undershoot to -2.0V for pulse widths
≤
4.0ns with 3.3 Volt, or to -2.0V for pulse
widths
≤
4.0ns (or -1.0V for
≤
8.0ns) with 5.0 Volt. Pulse widths measured at 50% points with amplitude measured peak to DC ref-
erence.
Capacitance
(T
A
= 25°C, V
CC
= 3.3V
±
0.3V or V
CC
= 5.0V
±
0.5V)
Symbol
C
I1
C
I2
C
O
Parameter
Input Capacitance (A0 - A11)
Input Capacitance (RAS, LCAS, UCAS, WE, OE)
Output Capacitance (I/O0 - I/O15)
Min.
—
—
—
Max.
5
7
7
Units
pF
pF
pF
Notes
1
1
1
1. Input capacitance measurements made with rise time shift method with CAS & RAS = V
IH
to disable output.
28H4723
SA14-4225-06
Revised 4/97
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 5 of 31
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