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XN1A312H

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size168KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

XN1A312H Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

XN1A312H Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G5
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationCASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)60
JESD-30 codeR-PDSO-G5
Number of components2
Number of terminals5
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN AND PNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1

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