SPD09N05 datasheet, PDF - EEWORLD Datasheet

SPD09N05: DescriptionPower Field-Effect Transistor, 9A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size1MB，7 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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SPD09N05 Overview

Power Field-Effect Transistor, 9A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN

Parameter Name	Attribute value
Parts packaging code	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (ID)	9 A
Maximum drain-source on-resistance	0.15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON
Base Number Matches	1

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