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M29DW128F60NF6E

Description
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
Categorystorage    storage   
File Size2MB,94 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
Download Datasheet Parametric View All

M29DW128F60NF6E Overview

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

M29DW128F60NF6E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeTSOP
package instructionTSSOP, TSSOP56,.8,20
Contacts56
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Is SamacsysN
Maximum access time60 ns
Spare memory width8
startup blockBOTTOM/TOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PDSO-G56
length18.4 mm
memory density134217728 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size16,254
Number of terminals56
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP56,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
page size8/16 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size8K,64K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width14 mm
Base Number Matches1
M29DW128F
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block)
3V supply Flash memory
Feature summary
Supply voltage
– V
CC
= 2.7V to 3.6V for Program, Erase and
Read
– V
PP
=12V for Fast Program (optional)
Asynchronous Random/Page Read
– Page width: 8 Words
– Page access: 25, 30ns
– Random access: 60, 70ns
Programming time
– 10µs per Byte/Word typical
– 4 Words / 8 Bytes Program
– 32-Word Write Buffer
Erase Verify
Memory blocks
– Quadruple Bank Memory Array:
16Mbit+48Mbit+48Mbit+16Mbit
– Parameter Blocks (at Top and Bottom)
Dual Operation
– While Program or Erase in one bank, Read
in any of the other banks
Program/Erase Suspend and Resume modes
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
Unlock Bypass Program
– Faster Production/Batch Programming
Common Flash Interface
– 64 bit Security Code
100,000 Program/Erase cycles per block
TSOP56 (NF)
14 x 20mm
BGA
TBGA64 (ZA)
10 x 13mm
Low power consumption
– Standby and Automatic Standby
Hardware Block Protection
– V
PP
/WP Pin for fast program and write
protect of the four outermost parameter
blocks
Security features
– Standard Protection
– Password Protection
Extended Memory Block
– Extra block used as security block or to
store additional information
Electronic Signature
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2220h + 2200h
ECOPACK
®
packages available
December 2007
Rev 8
1/94
www.numonyx.com
1

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