RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP
| Parameter Name | Attribute value |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.03 A |
| Collector-emitter maximum voltage | 35 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 25 |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 900 MHz |
| Base Number Matches | 1 |
| BF569NTRL | PMBTH10TRL | PMBTH10TRL13 | PMBTH81TRL | BF569NTRL13 | 57121E3 | PMBTH81TRL13 | |
|---|---|---|---|---|---|---|---|
| Description | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP | RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP | Aluminum Electrolytic Capacitors Power Ultra Long Life Snap-In | RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | - | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | - | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | - | EAR99 |
| Collector-emitter maximum voltage | 35 V | 25 V | 25 V | 20 V | 35 V | - | 20 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | - | SINGLE |
| Minimum DC current gain (hFE) | 25 | 60 | 60 | 60 | 25 | - | 60 |
| highest frequency band | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | ULTRA HIGH FREQUENCY BAND | - | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | - | R-PDSO-G3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | - | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | - | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | - | SMALL OUTLINE |
| Polarity/channel type | PNP | NPN | NPN | NPN | PNP | - | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified |
| surface mount | YES | YES | YES | YES | YES | - | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | - | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | - | DUAL |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | - | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | - | SILICON |
| Nominal transition frequency (fT) | 900 MHz | 0.65 MHz | 0.65 MHz | 0.6 MHz | 900 MHz | - | 0.6 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 | - | - | - |
| Maker | - | YAGEO | YAGEO | - | YAGEO | - | YAGEO |