MWT-1789 datasheet, PDF - EEWORLD Datasheet

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MWT-1789: DescriptionTRANSISTOR S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOT-89, 4PIN, FET RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size467KB，3 Pages; ManufacturerMicrowave Technology Inc.; Environmental Compliance

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MWT-1789 Overview

TRANSISTOR S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOT-89, 4PIN, FET RF Small Signal

MWT-1789 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	8 V
Maximum drain current (Abs) (ID)	0.4 A
Maximum drain current (ID)	0.4 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	S BAND
JESD-30 code	R-PSSO-F4
JESD-609 code	e3
Humidity sensitivity level	3
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	2.5 W
Minimum power gain (Gp)	10 dB
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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MwT-1789

DC-4 GHz Packaged FET

Preliminary Data Sheet April 2005

Features

Ideal for DC –4000 MHz High Linearity / High Dynamic Range Applications

Excellent RF Performance:

46 dBm IP3

70 dBc ACPR

28 dBm P1dB

14 dB SSG @ 2000 MHz

1.3 dB NF @ 2000 MHz

MTTF > 100 years @ channel temperature 150ºC

Lead Free RoHS Compliant Surface-Mount SOT-89 Package

Download MwT-1789 SPARAM Files

(zipped file)

Product Description

The MwT-1789 is a high linearity GaAs MESFET device in low cost SOT89 package that is ideally suited for high linearity

driver, PA (Power Amplifier), and high dynamic range LNA applications. The applications include 2G, 2.5G, and 3G

wireless infrastructure standards, such as GSM, TDMA, cdma, Edge, cdma2000, WCDMA, TD-SCDMA, and UMTS base

stations. This product is also idea for high data rate wireless LAN infrastructure applications, such as high QAM rate 802.11

WiFi and 802.16 WiMax base stations and APs (Access Points). In additional, the product can be used for point-to-point

microwave communications links. The third order intercept performance of the MwT-1789 is excellent, typically 18 dB

above the 1 dB power gain compression point. The noise figure is as low as 0.8 dB at 900 MHz. The chip is produced

using MwT's proprietary high linearity device design. It also uses MwT reliable metallization process. All chips are

passivated using MwT's patented "Diamond-Like Carbon" process for increased durability.

Typical RF Performance

(1)

Target for Driver and PA applications (Vds=6.5V, Ids=200mA, Ta=25

°C)

Parameter

Test Frequency

Gain

Input Return Loss

Output Return Loss

Output P1dB

Output IP3

Noise Figure

Parameter

Test Frequency

Gain

Output IP3

Noise Figure

(2)

Units

MHz

dBm

Units

MHz

dBm

900

0.8

900

28.5

Typical Data

1950

28.5

Typical Data

1950

1.3

2500

1.5

3500

2.2

2500

28.5

3500

28.5

Target for High Dynamic Range and Low Noise Applications (Vds=5V, Ids=200mA, Ta=25

°C)

RF data is taken from an application circuit. See application notes for details of RF performance and configuration of application circuit.

Noise Figure is taken at Ids=100mA.

MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538

510-651-6700

FAX

510-651-2208

info@mwtinc.com

MWT-1789 Related Products

	MWT-1789
Description	TRANSISTOR S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOT-89, 4PIN, FET RF Small Signal
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	8 V
Maximum drain current (Abs) (ID)	0.4 A
Maximum drain current (ID)	0.4 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	S BAND
JESD-30 code	R-PSSO-F4
JESD-609 code	e3
Humidity sensitivity level	3
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	2.5 W
Minimum power gain (Gp)	10 dB
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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