N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – August 1994
FEATURES
* Compact E-LINE (TO92 style) package
* 240 Volt BV
DS
* R
DS(on)
=4.3Ω Typical at V
GS
=2.5V
* Low threshold
* Fast switching
APPLICATIONS
* Earth recall and dialling switches
* Electronic hook switches
* Battery powered equipment
* Telecoms and high voltage dc-dc converters
ZVN4424A/C
D
G
G
S
D
S
SUFFIX A
SUFFIX C
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
240
260
1.5
±
40
750
-55 to +150
UNIT
V
mA
A
V
mW
°C
ZVN4424A/C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source
On-State Resistance
Forward
Transconductance (1) (2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
240
0.8
1.3
1.8
100
10
100
0.8
1.4
4
4.3
0.4
0.75
110
15
3.5
2.5
5
40
16
200
25
15
5
8
60
25
5.5
6
TYP
MAX. UNIT
V
V
nA
µA
µA
A
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
DD
≈50V,
I
D
=0.25A,
V
GEN
=10V
V
DS
=25V, V
GS
=0V, f=1MHz
CONDITIONS.
I
D
=1mA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=± 40V, V
DS
=0V
V
DS
=240 V, V
GS
=0
V
DS
=190 V,
V
GS
=0V, T=125°C
V
DS
=10 V, V
GS
=10V
V
GS
=10V,I
D
=500mA
V
GS
=2.5V,I
D
=100mA
V
DS
=10V,I
D
=0.5A
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
(1)*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
(2)Sample Test
(3) Switching times measured with 50Ω source impedance and >5ns rise time on pulse generator
ZVN4424A/C
SPICE PARAMETERS
*ZVN4424 MODEL LAST REVISION 1/94
*
.SUBCKT ZVN4424 30 40 50
* NODES: DRAIN GATE SOURCE
M1 30 20 50 50 MOD1 L=1 W=1
RG 40 20 200
RL 30 50 240E6
D1 50 30 DIODE1
.MODEL MOD1 NMOS VT0=1.25 RS=2.34 RD=1.634 IS=1E-15 KP=5.319
+CGS0=101P CGD0=4P CBD=66.2P PB=1
.MODEL DIODE1 D IS=5.516E-13 RS=0.2084 N=1.0078
.ENDS ZVN4424
For clarification of the above or for technical enquires generally please contact the Applications Dept.
at Zetex plc.
©1992 ZETEX plc
The copyright in this model and the design embodied belonging to Zetex plc (“Zetex”). It is supplied free of charge by Zetex for the
purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are
reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for the purpose is given and no
liability in respect of any use is accepted by Zetex plc, its distributors or agents.
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Fax: (44)161-627 5467
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
©
Zetex plc 1997
Internet:
http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
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product or service.
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