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UZVN4424Z

Description
Small Signal Field-Effect Transistor, 0.3A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size83KB,5 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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UZVN4424Z Overview

Small Signal Field-Effect Transistor, 0.3A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

UZVN4424Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW THRESHOLD
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage240 V
Maximum drain current (ID)0.3 A
Maximum drain-source on-resistance5.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)15 pF
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

UZVN4424Z Related Products

UZVN4424Z ZVN4424ZTC
Description Small Signal Field-Effect Transistor, 0.3A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 0.3A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code not_compliant unknown
ECCN code EAR99 EAR99
Other features LOW THRESHOLD LOW THRESHOLD
Shell connection DRAIN DRAIN
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 240 V 240 V
Maximum drain current (ID) 0.3 A 0.3 A
Maximum drain-source on-resistance 5.5 Ω 5.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 15 pF 15 pF
JESD-30 code R-PSSO-F3 R-PSSO-F3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) MATTE TIN
Terminal form FLAT FLAT
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 10 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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