ZRT100
9.8V LOW POWER PRECISION REFERENCE SOURCE
DESCRIPTION
The ZRT100 is a monolithic integrated circuit providing
a precise stable reference voltage of 9.8V at 500µA.
The circuit features a knee current of 150µA and
operation over a wide range of temperatures and
currents.
The ZRT100 is available in a SOT223 package for
surface mount applications. This device offers a trim
facility whereby the output voltage can be adjusted as
sh o w n i n Fi g . 1. Th is fa c il it y i s us e d w h e n
compensating for system errors or setting the
reference output to a particular value. When the trim
facility is not used, the pin should be left open circuit.
SOT223
FEATURES
•
Trimmable output
•
Excellent temperature stability
•
Low output noise figure
•
Available in two temperature ranges
•
1 and 2% initial voltage tolerance versions
available
•
No external stabilising capacitor required in most
cases
•
Low slope resistance
•
SOT223 small outline package
SOT223
Package suffix G
Top view (pin 4 floating or
connected to pin 2)
ORDERING INFORMATION
DEVICE
ZRT100GC2
ZRT100GC1
ZRT100GA1
TOL%
2
1
1
OPERATING
TEMP.
-40 to 85°C
-40 to 85°C
-55 to 125°C
PACKAGE
SOT223
SOT223
SOT223
PARTMARK
ZRT100C2
ZRT100C1
ZRT100A1
A grade
C grade
-55°C to 125°C
-40°C to 85°C
ISSUE 3 - DECEMBER 2003
1
SEMICONDUCTORS
ZRT100
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse current
A grade
C grade
Storage temperature
(1)
(1)
SYMBOL
LIMIT
30
UNIT
mA
°C
°C
°C
Operating temperature:
T
OMP
-55 to 125
-40 to 85
T
STG
-55 to 150
Above 25°C this figure should be linearly derated to 6mA at 125°C
POWER DISSIPATION
(at T
amb
= 25°C unless otherwise stated)
PACKAGE
SOT223
VALUE
2
UNIT
W
TEMPERATURE DEPENDENT ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
INITIAL
VOLTAGE
TOLERANCE %
1&2
GRADE A
TYP
27.0
MAX
90.0
GRADE C
TYP
10.8
MAX
34.4
mV
UNIT
∆V
R
Output voltage change over
relevant temperature
range(See note (a))
Output voltage temperature
coefficient (See note (b))
T
C
V
R
1&2
15.0
50.0
15.0
50.0
ppm/°C
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
SYMBOL
V
R
PARAMETER
Output voltage
1% tolerance (A1,C1)
2% tolerance (C2)
V
TRIM
T
C
V
TRIM
I
R
t
on
t
off
e
np-p
R
S
Output voltage adjustment range
Change in T
C
V
R
with output adjustment
Operating current range
Turn-on time
Turn-off time
Output voltage noise
(over the range 0.1 to 10Hz)
Slope resistance
R
T
=100k
See note (c)
R
L
=1k
Peak to peak
measurement
I
R
= 0.5mA to
5mA
See note (d)
0.15
400
0.3
50
1.8
4.0
I
R
=500 A
9.70
9.60
9.80
9.80
5
5.0
30
9.90
10.00
V
V
%
ppm/°C/%
mA
s
V
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ISSUE 3 - DECEMBER 2003
SEMICONDUCTORS
2
ZRT100
TYPICAL CHARACTERISTICS
NOTES:
(a) Output change with temperature
The absolute maximum difference between the
maximum output voltage and the minimum output
voltage over the specified temperature range:
(d) Slope resistance (R
S
)
The slope resistance is defined as:
R
S
=
V
R
=V
max
-V
min
(b) Output temperature coefficient (T
C
V
R
)
The ratio of the output change with temperature to the
specified temperature range expressed in ppm/°C:
change inV
R
specific current range
I=5-0.5=4.5mA (typically)
(e) Line regulation
The ratio of change in output voltage to the change in
input voltage producing it:
T
C
V
R
=
∆
V
R
x
10
ppm
°
C
V
R
x
∆
T
6
T= Full temperature range
(c) Operating current (I
R
)
Maximum operating current must be derated as
indicated in maximum ratings.
ISSUE 3 - DECEMBER 2003
3
R
S
x
100
%/
V
V
R
x R
SOURCE
SEMICONDUCTORS
ZRT100
SCHEMATIC DIAGRAM
Figure 1:
This circuit will allow the reference to be trimmed over
a wide range. The device is specified over a 5% trim
range.
ISSUE 3 - DECEMBER 2003
SEMICONDUCTORS
4
ZRT100
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
DIM
Min
A
A1
b
b2
C
D
–
0.02
0.66
2.90
0.23
6.30
Max
1.80
0.10
0.84
3.10
0.33
6.70
Min
–
0.0008
0.026
0.114
0.009
0.248
Max
0.071
0.004
0.033
0.122
0.013
0.264
e
e1
E
E1
L
Inches
DIM
Min
Max
Min
Max
2.30 BSC
4.60 BSC
6.70
3.30
0.90
–
7.30
3.70
–
–
0.0905 BSC
0.181 BSC
0.264
0.130
0.0355
–
0.287
0.146
–
–
Millimeters
Inches
© Zetex plc 2003
Europe
Zetex plc
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Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
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Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
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Zetex (Asia) Ltd
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Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
www.zetex.com
ISSUE 3 - DECEMBER 2003
5
SEMICONDUCTORS
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