IRLR8729PbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
30
8.9
10
58
V
D
D
mΩ
nC
A
G
S
Q
g (typical)
I
D
(@T
C
= 25°C)
S
G
f
D-Pak
IRLR8729PbF-1
Features
Benefits
Industry-standard pinout D-Pak and I-Pak
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRLR8729PbF-1
Package Type
D-Pak
Standard Pack
Form
Quantity
Tape and Reel
Tape and Reel Left
2000
3000
Orderable Part Number
IRLR8729TRPbF-1
IRLR8729TRLPbF-1
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
58
Units
V
g
Maximum Power Dissipation
g
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
f
41
f
260
55
27
A
W
W/°C
°C
0.37
-55 to + 175
300 (1.6mm from case)
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Typ.
Max.
2.73
50
110
Units
°C/W
gÃ
–––
–––
–––
1
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2014 International Rectifier
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June 29, 2014
IRLR8729PbF-1
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
91
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
21
6.0
8.9
1.8
-6.2
–––
–––
–––
–––
–––
10
2.1
1.3
4.0
2.6
4.8
6.3
1.6
10
47
11
10
1350
280
120
–––
–––
8.9
V
Conditions
V
GS
= 0V, I
D
= 250μA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 25A
mΩ
11.9
V
GS
= 4.5V, I
D
= 20A
2.35
V V
DS
= V
GS
, I
D
= 25μA
e
e
–––
1.0
150
100
-100
–––
16
–––
–––
–––
–––
–––
–––
2.7
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
mV/°C
μA
nA
S
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 20A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 20A
See Fig. 16
nC
Ω
ns
V
DD
= 15V, V
GS
= 4.5V
I
D
= 20A
R
G
= 1.8Ω
See Fig. 14
V
GS
= 0V
pF
V
DS
= 15V
ƒ = 1.0MHz
Max.
74
20
5.5
Units
mJ
A
mJ
V
DS
= 16V, V
GS
= 0V
nC
e
Avalanche Characteristics
Ã
d
–––
–––
–––
–––
–––
–––
–––
–––
16
19
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
2
Min. Typ. Max. Units
58
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 300A/μs
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
f
A
Ã
260
1.0
24
29
V
ns
nC
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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2014 International Rectifier
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June 29, 2014
IRLR8729PbF-1
1000
TOP
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
1000
TOP
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
1
≤
60μs PULSE WIDTH
2.5V
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Tj = 25°C
≤
60μs PULSE WIDTH
Tj = 175°C
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = 25A
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
1.5
1.0
1
T J = 25°C
VDS = 15V
≤60μs
PULSE WIDTH
1
2
3
4
5
6
7
8
0.1
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
3
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©
2014 International Rectifier
Fig 4.
Normalized On-Resistance
vs. Temperature
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June 29, 2014
IRLR8729PbF-1
10000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
5.0
ID= 20A
4.0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
Ciss
1000
Coss
3.0
2.0
1.0
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0.0
0
2
4
6
8
10
12
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
100
1msec
100
T J = 175°C
10
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1
T J = 25°C
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
10msec
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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2014 International Rectifier
Fig 8.
Maximum Safe Operating Area
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June 29, 2014
IRLR8729PbF-1
60
Limited By Package
50
ID, Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
2.5
2.0
40
30
20
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
ID = 25μA
ID = 50μA
ID = 100μA
1.0
0.5
-75 -50 -25 0
25 50 75 100 125 150 175 200
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
0.1
R
1
R
1
τ
2
R
2
R
2
τ
C
τ
C
Ri (°C/W)
τi
(sec)
1.251
0.000513
1.481
0.004337
τ
1
τ
2
0.01
SINGLE PULSE
( THERMAL RESPONSE )
C i=
τi/R
i
Ci=
τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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©
2014 International Rectifier
Submit Datasheet Feedback
June 29, 2014
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