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IXTA2R4N120P

Description
Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size154KB,4 Pages
ManufacturerIXYS
Environmental Compliance  
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IXTA2R4N120P Overview

Power Field-Effect Transistor, 2.4A I(D), 1200V, 7.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

IXTA2R4N120P Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknown
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)200 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1200 V
Maximum drain current (Abs) (ID)2.4 A
Maximum drain current (ID)2.4 A
Maximum drain-source on-resistance7.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)6 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Polar
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA2R4N120P
IXTH2R4N120P
IXTP2R4N120P
V
DSS
I
D25
R
DS(on)
= 1200V
= 2.4A
7.5Ω
Ω
TO-263 (IXTA)
G
S
(TAB)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
2.4
6
2.4
200
10
125
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
TO-220 (IXTP)
G
D S
(TAB)
TO-247 (IXTH)
G
D
S
(TAB)
D = Drain
TAB = Drain
G = Gate
S = Source
1.6mm (0.062) from case for 10s
Plastic body for 10s
Mounting torque
TO-263
TO-220
TO-247
(TO-220, TO-247)
300
260
1.13 / 10
2.5
3.0
6.0
Features
International standard packages
Unclamped Inductive Switching
(UIS) rated
Low package inductance
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 250μA
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
1200
2.5
4.5
±50
V
V
nA
Easy to mount
Space savings
High power density
Applications:
High Voltage Switched-mode and
resonant-mode power supplies
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
High Voltage DC-DC converters
High Voltage DC-AC inverters
DS99873A (04/08)
5
μA
300
μA
6.5
7.5
Ω
V
GS
= 10V, I
D
=
0.5
I
D25
, Note 1
© 2008 IXYS CORPORATION, All rights reserved
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