Polar
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA2R4N120P
IXTP2R4N120P
IXTH2R4N120P
V
DSS
I
D25
R
DS(on)
= 1200V
= 2.4A
7.5
TO-263 (IXTA)
G
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25C
Maximum Ratings
1200
1200
30
40
2.4
6.0
2.4
200
10
125
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
C
C
C
°C
°C
N/lb
Nm/lb.in
g
g
g
G
D
S
G
D
S
S
D (Tab)
TO-220 (IXTP)
D (Tab)
TO-247 (IXTH)
D
(Tab)
D
= Drain
Tab = Drain
G = Gate
S = Source
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
300
260
Features
10..65 / 2.2..14.6
1.13 / 10
2.5
3.0
6.0
International Standard Packages
Low Q
G
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 250μA
V
GS
=
30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
6.5
Characteristic Values
Min.
Typ.
Max.
1200
2.5
4.5
V
V
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Discharge Circiuts in Lasers, Spark
Igniters, RF Generators
High Voltage Pulse Power
Applications
High Power Density
Easy to Mount
Space Savings
Applications
100
nA
5
A
300
A
7.5
V
GS
= 10V, I
D
= 0.5
•
I
D25
, Note 1
© 2018 IXYS CORPORATION, All rights reserved
DS99873B(6/18)
IXTA2R4N120P IXTP2R4N120P
IXTH2R4N120P
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-220
TO-247
0.50
0.21
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 0.5
•
I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 18 (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max
1.2
2.0
1207
57
11
22
25
70
32
37
6
20
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.0
C/W
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
V
GS
= 0V
Repetitive, pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 2.4A, -di/dt = 100A/μs
V
R
= 100V
920
Characteristic Values
Min.
Typ.
Max
2.4
7.2
1.5
A
A
V
ns
Note 1. Pulse test, t
300s, duty cycle, d 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXTA2R4N120P IXTP2R4N120P
IXTH2R4N120P
Fig. 1. Output Characteristics @ T
J
= 25 C
2.4
V
GS
= 10V
7V
3.6
3.2
2.8
1.6
6V
2.4
6V
V
GS
= 10V
7V
o
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
o
2
I
D
- Amperes
I
D
- Amperes
2
1.6
1.2
0.8
5V
1.2
0.8
0.4
5V
0.4
0
0
2
4
6
8
10
12
14
16
18
0
0
5
10
15
20
25
30
V
DS
- Volts
o
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125 C
2.4
V
GS
= 10V
7V
3.2
2.8
Fig. 4. R
DS(on)
Normalized to I
D
= 1.2A Value vs.
Junction Temperature
V
GS
= 10V
2
R
DS(on)
- Normalized
I
D
- Amperes
1.6
6V
2.4
I
D
= 2.4A
2.0
1.6
1.2
0.8
0.4
I
D
= 1.2A
1.2
0.8
5V
0.4
0
0
5
10
15
20
25
30
35
40
45
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
2.6
2.4
2.2
Fig. 5. R
DS(on)
Normalized to I
D
= 1.2A Value vs.
Drain Current
V
GS
= 10V
T
J
= 125 C
o
Fig. 6. Maximum Drain Current vs. Case Temperature
2.8
2.4
2.0
R
DS(on)
- Normalized
I
D
- Amperes
T
J
= 25 C
o
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.6
1.2
0.8
0.4
0.0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2018 IXYS CORPORATION, All rights reserved
IXTA2R4N120P IXTP2R4N120P
IXTH2R4N120P
Fig. 7. Input Admittance
2.8
2.4
2.0
4
3.6
3.2
2.8
T
J
= - 40 C
o
Fig. 8. Transconductance
I
D
- Amperes
g
f s
- Siemens
1.6
1.2
0.8
0.4
0.0
3.2
3.6
4.0
4.4
4.8
5.2
5.6
6.0
6.4
T
J
= 125 C
25 C
- 40 C
o
o
o
2.4
2
1.6
1.2
0.8
0.4
0
0
0.4
0.8
1.2
1.6
2
25 C
o
125 C
o
2.4
2.8
3.2
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
8
7
6
7
10
9
8
V
DS
= 600V
I
D
= 1.2A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 125 C
T
J
= 25 C
o
o
5
4
3
2
1
0
0.4
0.45
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10000
10
Fig. 12. Maximum Transient Thermal Impedance
f
= 1 MHz
Capacitance - PicoFarads
Ciss
1000
100
Coss
Z
(th)JC
- K / W
30
35
40
1
0.1
10
Crss
1
0
5
10
15
20
25
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_2R4N120P(3C) 4-02-08-A
IXTA2R4N120P IXTP2R4N120P
IXTH2R4N120P
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
TO-247 Outline
1 - Gate
2,4 - Drain
3 - Source
© 2018 IXYS CORPORATION, All rights reserved
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