Preliminary Technical Information
TrenchT2
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA220N04T2
IXTP220N04T2
V
DSS
I
D25
R
DS(on)
= 40V
= 220A
≤
3.5mΩ
Ω
TO-263 (IXTA)
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
LRMS
I
DM
I
AR
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GS
= 1MΩ
Transient
T
C
= 25°C
Lead Current Limit, RMS
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
40
40
±
20
220
75
660
110
600
360
-55 ... +175
175
-55 ... +175
V
V
V
A
A
A
A
mJ
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
G
S
(TAB)
TO-220 (IXTP)
G
D
S
(TAB)
D = Drain
TAB = Drain
G = Gate
S = Source
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque ( TO-220 )
TO-263
TO-220
300
260
1.13/10
2.5
3.0
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175°C
Operating Temperature
Advantages
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 250μA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
T
J
= 150°C
V
GS
= 10V, I
D
= 50A, Notes 1, 2
Characteristic Values
Min. Typ.
Max.
40
2.0
4.0
±200
V
V
nA
Easy to mount
Space savings
High power density
Applications
5
μA
50
μA
2.8
3.5 mΩ
•
Synchronous Buck Converters
•
High Current Switching Power
•
•
•
•
Supplies
Battery Powered Electric Motors
Resonant-mode power supplies
Electronics Ballast Application
Class D Audio Amplifiers
© 2008 IXYS CORPORATION, All rights reserved
DS99918B(04/08)
IXTA220N04T2
IXTP220N04T2
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCH
TO-220
0.50
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 20V, I
D
= 50A
R
G
= 3.3Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 60A, Note 1
Characteristic Values
Min. Typ.
Max.
40
66
6820
1185
250
15
21
31
21
112
33
30
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.42
°C/W
°C/W
TO-263 (IXTA) Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
V
GS
= 0V
Repetitive, Pulse width limited by T
JM
I
F
= 50A, V
GS
= 0V, Note 1
I
F
= 110A, V
GS
= 0V
-di/dt = 100A/μs
V
R
= 20V
45
1.4
32
Characteristic Values
Min. Typ.
Max.
220
660
1.0
A
A
V
ns
A
nC
TO-220 (IXTP) Outline
Notes: 1.
Pulse test, t
≤
300μs; duty cycle, d
≤
2%.
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5mm or less from the package body.
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA220N04T2
IXTP220N04T2
Fig. 1. Output Characteristics
@ 25ºC
220
200
180
160
V
GS
= 15V
10V
9V
8V
350
300
250
Fig. 2. Extended Output Characteristics
@ 25ºC
V
GS
= 15V
10V
9V
8V
I
D
- Amperes
I
D
- Amperes
140
120
100
80
60
40
20
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
5V
6V
7V
7V
200
150
100
50
5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
6V
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 150ºC
220
200
180
160
V
GS
= 15V
10V
9V
8V
2.0
Fig. 4. R
DS(on)
Normalized to I
D
= 110A Value
vs. Junction Temperature
V
GS
= 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
R
DS(on)
- Normalized
I
D
- Amperes
140
120
100
80
60
40
20
0
0.0
0.2
0.4
0.6
0.8
1.0
7V
I
D
= 220A
I
D
= 110A
6V
5V
1.2
1.4
-50
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 110A Value
vs. Drain Current
2.2
2.0
V
GS
= 10V
15V
- - - -
T
J
= 175ºC
90
80
70
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
R
DS(on)
- Normalized
1.8
1.6
1.4
1.2
1.0
0.8
0
40
80
120
160
200
240
I
D
- Amperes
T
J
= 25ºC
280
320
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXTA220N04T2
IXTP220N04T2
Fig. 7. Input Admittance
160
140
120
100
80
60
40
20
0
2.5
3
3.5
4
4.5
5
5.5
6
6.5
T
J
=150ºC
25ºC
- 40ºC
120
T
J
= - 40ºC
100
25ºC
150ºC
60
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
80
40
20
0
0
20
40
60
80
100
120
140
160
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
300
270
240
210
10
9
8
7
V
DS
= 20V
I
D
= 110A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 150ºC
T
J
= 25ºC
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
180
150
120
90
60
30
0
6
5
4
3
2
1
0
0
20
40
60
80
100
120
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
Fig. 12. Forward-Bias Safe Operating Area
1,000
R
DS(on)
Limit
25µs
f
= 1 MHz
Capacitance - PicoFarads
I
D
- Amperes
10,000
Ciss
100
100µs
1ms
Coss
1,000
10
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
1
DC
10ms
100ms
Crss
100
0
5
10
15
20
25
30
35
40
1
10
100
V
DS
- Volts
V
DS
- Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA220N04T2
IXTP220N04T2
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
28
27
26
25
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 20V
28
27
26
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 20V
T
J
= 125ºC
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
t
r
- Nanoseconds
24
23
22
21
20
19
18
17
16
25
35
45
55
65
75
85
95
105
115
125
I
D
t
r
- Nanoseconds
25
24
23
22
21
20
19
18
40
60
80
100
120
140
T
J
= 25ºC
I
D
= 110A
= 220A
160
180
200
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
130
120
110
100
90
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
16
18
20
I
D
= 220A, 110A
70
36
34
32
30
65
60
55
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
42
40
38
36
34
I
D
= 220A
32
30
28
I
D
= 110A
26
24
22
20
25
35
45
55
65
75
85
95
105
115
18
125
t
r
V
DS
= 20V
t
d(on)
- - - -
t
f
V
DS
= 20V
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
R
G
= 3.3Ω, V
GS
= 10V
t
d(on)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
t
r
- Nanoseconds
50
45
40
35
30
25
20
15
10
5
28
26
24
22
20
18
16
14
12
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
42
38
34
30
26
22
18
14
40
60
80
100
120
140
T
J
= 25ºC
160
180
50
200
180
46
160
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
200
t
f
V
DS
= 20V
t
d(off)
- - - -
t
f
V
DS
= 20V
t
d(off)
- - - -
180
160
R
G
= 3.3Ω, V
GS
= 10V
T
J
= 125ºC, V
GS
= 10V
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
t
f
- Nanoseconds
42
38
34
30
26
22
200
140
120
100
80
60
40
20
0
2
4
6
8
10
12
14
16
18
20
I
D
140
120
100
I
D
= 110A
80
60
40
= 220A
20
0
T
J
= 125ºC
I
D
- Amperes
R
G
- Ohms
© 2008 IXYS CORPORATION, All rights reserved
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