Preliminary Technical Information
GigaMOS
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN160N30T
R
DS(on)
t
rr
V
DSS
I
D25
=
=
300V
130A
19m
200ns
miniBLOC, SOT-227
E153432
S
G
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25C
Maximum Ratings
300
300
20
30
130
440
80
5
20
900
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
V/ns
W
C
C
C
°C
°C
V~
V~
Nm/lb.in
Nm/lb.in
g
S
D
G = Gate
S = Source
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
Maximum Lead Temperature for Soldering
Plastic Body for 10s
50/60 Hz, RMS
I
ISOL
1mA
t = 1 minute
t = 1 second
300
260
2500
3000
1.5/13
1.3/11.5
30
Mounting Torque
Terminal Connection Torque
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation voltage 2500
V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low R
DS(on)
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
GS
= 10V, I
D
= 80A, Note 1
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
300
3.0
5.0
200
V
V
nA
Easy to Mount
Space Savings
High Power Density
Applications
50
A
3 mA
19 m
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
DS100128A(9/14)
© 2014 IXYS CORPORATION, All Rights Reserved
IXFN160N30T
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
R
Gi
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 80A
Gate Input Resistance
Resistive Switching Times
V
GS
= 15V, V
DS
= 0.5 • V
DSS
, I
D
= 80A
R
G
= 1 (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 60A, Note 1
Characteristic Values
Min.
Typ.
Max.
90
150
24.5
1825
45
1.1
34
68
90
23
376
140
56
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.138C/W
0.05C/W
(M4 screws (4x) supplied)
SOT-227B (IXFN) Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 100A, V
GS
= 0V, Note 1
I
F
= 80A, -di/dt = 100A/s
V
R
= 75V, V
GS
= 0V
1.09
13
Characteristic Values
Min.
Typ.
Max.
160
640
1.4
200
A
A
V
ns
C
A
Note 1: Pulse test, t
300s, duty cycle, d
2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFN160N30T
Fig. 1. Output Characteristics @ T
J
= 25ºC
160
V
GS
= 10V
140
7V
120
250
300
V
GS
= 10V
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
80
60
40
20
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
6V
I
D
- Amperes
100
200
150
6V
100
50
5V
0
2.8
3.2
0
2
4
6
8
10
12
14
16
18
20
5V
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
160
140
120
V
GS
= 10V
7V
6V
2.8
Fig. 4. R
DS(on)
Normalized to I
D
= 80A Value vs.
Junction Temperature
V
GS
= 10V
2.4
R
DS(on)
- Normalized
I
D
- Amperes
2.0
100
80
60
40
20
4V
0
0
1
2
3
4
5
6
7
5V
I
D
= 160A
1.6
I
D
= 80A
1.2
0.8
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 80A Value vs.
Drain Current
2.6
2.4
2.2
V
GS
= 10V
140
120
T
J
= 125ºC
100
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
40
80
120
160
I
D
- Amperes
T
J
= 25ºC
80
60
40
20
0
200
240
280
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2014 IXYS CORPORATION, All Rights Reserved
IXFN160N30T
Fig. 7. Input Admittance
200
180
160
140
120
100
80
60
40
20
0
3.4
3.8
4.2
4.6
5.0
5.4
5.8
6.2
6.6
0
0
20
40
60
80
100
120
140
160
180
200
250
300
T
J
= - 40ºC
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
200
25ºC
150
125ºC
100
50
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
300
10
9
250
8
7
V
DS
= 150V
I
D
= 80A
I
G
= 10mA
Fig. 10. Gate Charge
200
I
S
- Amperes
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
6
5
4
3
2
1
150
100
50
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
50
100
150
200
250
300
350
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1,000
Fig. 12. Forward-Bias Safe Operating Area
R
DS(
on
)
Limit
f
= 1 MHz
Capacitance - PicoFarads
Ciss
100
10,000
25µs
1,000
C oss
- Amperes
100µs
10
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
1ms
100
C rss
10
0
5
10
15
20
25
30
35
40
I
D
1
10
100
1000
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN160N30T
90
80
70
60
I
D
= 80A
50
40
30
20
25
35
45
55
65
75
85
95
105
115
125
I
D
= 160A
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
R
G
= 1Ω, V
GS
= 15V
V
DS
= 150V
90
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
R
G
= 1Ω, V
GS
= 15V
80
V
DS
= 150V
t
r
- Nanoseconds
t
r
- Nanoseconds
70
T
J
= 25ºC
60
50
T
J
= 125ºC
40
30
80
90
100
110
120
130
140
150
160
T
J
- Degrees Centigrade
I
D
- Amperes
300
260
220
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
t
r
V
DS
= 150V
140
120
100
80
28
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
t
f
V
DS
= 150V
130
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
26
t
d(off)
- - - -
R
G
= 1Ω, V
GS
= 15V
120
t
d ( o f f )
- Nanoseconds
t
d ( o n )
- Nanoseconds
t
f
- Nanoseconds
t
r
- Nanoseconds
24
110
180
140
100
60
20
1
2
3
4
5
I
D
= 160A
I
D
= 80A
22
I
D
= 80A
I
D
= 160A
100
60
40
20
0
20
90
18
80
16
25
35
45
55
65
75
85
95
105
115
6
7
8
9
10
70
125
R
G
- Ohms
T
J
- Degrees Centigrade
28
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
t
f
t
d(off
)
- - - -
130
700
600
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
t
f
V
DS
= 150V
560
480
t
d(off)
- - - -
26
R
G
= 1Ω, V
GS
= 15V
V
DS
= 150V
120
T
J
= 125ºC, V
GS
= 15V
t
d ( o f f )
- Nanoseconds
t
d ( o f f )
- Nanoseconds
t
f
- Nanoseconds
24
110
t
f
- Nanoseconds
500
400
300
200
100
0
1
400
320
I
D
= 80A
240
160
80
0
22
T
J
= 25ºC, 125ºC
100
I
D
= 160A
20
90
18
80
16
80
90
100
110
120
130
140
150
70
160
2
3
4
5
6
7
8
9
10
I
D
- Amperes
R
G
- Ohms
© 2014 IXYS CORPORATION, All Rights Reserved
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