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ES1DSR

Description
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, SMAJ, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size355KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

ES1DSR Overview

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, SMAJ, 2 PIN

ES1DSR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeDO-214AC
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceTIN LEAD
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature30
Base Number Matches1
MCC
  omponents
21201 Itasca Street Chatsworth

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ES1DSR
Features
For Surface Mount Applications
Extremely Low Thermal Resistance
Easy Pick And Place
High Temp Soldering: 250°C for 10 Seconds At Terminals
Superfast Recovery Times For High Efficiency
Maximum Ratings
Operating Temperature: -50°C to +150°C
Storage Temperature: -50°C to +150°C
Maximum Thermal Resistance; 15
°C/W
Junction To Lead
MCC
Device
Maximum
Maximum Maximum
Catalog
Marking
Recurrent
RMS
DC
Number
Peak Reverse
Voltage
Blocking
Voltage
Voltage
ES1DSR
ES1D
200V
140V
200V
1 Amp Soft
Recovery Rectifier
200 Volts
DO-214AC
(SMAJ) (High Profile)
H
Cathode Band
J
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
I
F(AV)
I
FSM
1.0A
30A
T
J
= 75°C
8.3ms, half sine
F
G
E
A
C
D
B
DIMENSIONS
INCHES
MIN
.078
.067
.002
---
.035
.065
.205
.160
.100
MM
MIN
1.98
1.70
.05
---
.89
1.65
5.21
4.06
2.57
V
F
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
.97V
I
FM
= 1.0A;
T
J
= 25°C*
T
J
= 25°C
T
J
= 125°C
I
R
5µA
30µA
DIM
A
B
C
D
E
F
G
H
J
MAX
.116
.089
.008
.02
.055
.096
.224
.180
.112
MAX
2.95
2.25
.20
.51
1.40
2.45
5.69
4.57
2.84
NOTE
SUGGESTED SOLDER
PAD LAYOUT
T
rr
Typical Junction
Capacitance
C
J
50ns
45pF
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
Measured at
1.0MHz, V
R
=4.0V
0.090”
0.085”
0.070”
*Pulse test: Pulse width 200
µsec,
Duty cycle 2%
www.mccsemi.com
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