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IXFD75N10Q-7X

Description
Power Field-Effect Transistor, 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3
CategoryDiscrete semiconductor    The transistor   
File Size237KB,1 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
Download Datasheet Parametric View All

IXFD75N10Q-7X Overview

Power Field-Effect Transistor, 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3

IXFD75N10Q-7X Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionUNCASED CHIP, R-XUUC-N3
Reach Compliance Codecompliant
ConfigurationSINGLE
Minimum drain-source breakdown voltage100 V
Maximum drain-source on-resistance0.02 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUUC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
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