Power Field-Effect Transistor, 500V, 0.75ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-2
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Parts packaging code | DIE |
| package instruction | UNCASED CHIP, R-XUUC-N2 |
| Contacts | 2 |
| Reach Compliance Code | unknown |
| Other features | MEGAFET |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 500 V |
| Maximum drain-source on-resistance | 0.75 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-XUUC-N2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | UNCASED CHIP |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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