PROVISIONAL
IRGS14B40L
14A, Voltage Clamped
400V IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Co l l ect o r
G at e
Rg
Rg e
Em it te r
D
2
P ak
MIN
TYP MAX
400 430
30
2.2
18
14
-10
-40
10
175
UNITS
V
V
V
A
A
V
C
CONDITIONS
RG =1 kOhm , Ic =7A
Ic = -10mA, 25 C
Ic = 1 mA
VGE = 5V, 25 C
VGE = 5V, 100 C
370
24
V
CL
V
ECAV
V
GE(TH)
I
C25
I
C100
V
GE
T
J
V
ESD
COLLECTOR - EMITTER CLAMPING VOLTAGE
EMITTER - COLLECTOR AVALANCHE VOLTAGE
GATE - EMITTER THRESHOLD VOLTAGE
CONTINUOUS COLLECTOR CURRENT
CONTINUOUS COLLECTOR CURRENT
GATE - EMITTER VOLTAGE
OPERATING JUNCTION TEMPERATURE RANGE
ELECTROSTATIC VOTAGE FROM
EACH PIN TO EACH OF THE OTHER PINS
0.75 1.8
-6
24
14
10
6
kV
A
A
A
A
A
A
us
C= 100pF, R = 1.5 kOhms
0.7mH INDUCTANCE, 25 C
2.2mH INDUCTANCE, 25 C
4.7mH INDUCTANCE, 25 C
1.5mH INDUCTANCE, 150 C
4.7mH INDUCTANCE, 150 C
8.7mH INDUCTANCE, 150 C
Tc = 150 C
I
SCIS25C
SELF CLAMPED INDUCTIVE SWITCHING CURRENT
I
SCIS100C
SELF CLAMPED INDUCTIVE SWITCHING CURRENT
13
7.5
5.5
t
sc
R1
R2
V
CE(ON)
R
qJC
R
qJA
SHORT CIRCUIT WITHSTAND TIME
GATE SERIES RESISTANCE
GATE EMITTER RESISTANCE
COLLECTOR - EMITTER SATURATION VOLTAGE
THERMAL RESISTANCE, JUNCTION TO CASE
THERMAL RESISTANCE,JUNCTION TO AMBIENT
(PCB MOUNTED, STEADY STATE )
750
75
20
1.55
1.8
1.5
Ohms
k Ohms
V
V
O
Ic= 7A, VGE =5V, 25C
Ic = 10A, VGE =5V, 25C
K / WATT
40
O
K / WATT
11-4-98
IRGS14
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Collector-to-Emitter Breakdown Voltage
—
—
V
V
(BR)CES
DV
(BR)CES
/DT
J
Temperature Coeff. of Breakdown Voltage —
—
—
V/°C
V
CE(on)
Collector-to-Emitter Saturation Voltage
— 1.55 —
—
1.8
—
V
—
—
V
GE(th)
Gate Threshold Voltage
—
DV
GE(th)
/DT
J
Temperature Coeff. of Threshold Voltage
—
––– — mV/°C
g
fe
Forward Transconductance
––– ––– —
S
I
CES
Zero Gate Voltage Collector Current
—
—
µA
—
—
V
FM
Diode Forward Voltage Drop
—
V
—
I
GES
Gate-to-Emitter Leakage Current
—
—
nA
Conditions
V
GE
= V, I
C
= µA
V
GE
= V, I
C
= mA
I
C
= 7A
V
GE
= 5V
I
C
= 10A
See Fig. 2, 5
I
C
= A, T
J
= °C
V
CE
= V
GE
, I
C
= µA
V
CE
= V
GE
, I
C
= µA
V
CE
= V, I
C
= A
V
GE
= V, V
CE
= V
V
GE
= V, V
CE
= V, T
J
= °C
I
C
= A
See Fig. 13
I
C
= A, T
J
= °C
V
GE
= V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Min. Typ. Max. Units
Conditions
—
—
I
C
= A
—
—
nC
V
CC
= V
See Fig.8
—
—
V
GE
= V
—
—
—
—
—
—
T
J
= °C
ns
—
—
—
I
C
= A, V
CC
= V
—
—
—
V
GE
= V, R
G
=
W
—
—
Energy losses include "tail"
—
—
mJ
See Fig. 9,10,14
—
—
—
—
750
µs
V
CC
= V, T
J
= °C
V
GE
= V, R
G
=
W
, V
CPK
< V
Turn-On Delay Time
—
—
—
T
J
= °C,
Rise Time
—
—
—
I
C
= A, V
CC
= V
ns
Turn-Off Delay Time
—
—
—
V
GE
= V, R
G
=
W
Fall Time
—
—
—
Energy losses include "tail"
Total Switching Loss
—
—
mJ
See Fig. 11,14
Internal Emitter Inductance
—
—
nH
Measured 5mm from package
Input Capacitance
—
—
V
GE
= V
Output Capacitance
—
—
pF
V
CC
= V
See Fig. 7
Reverse Transfer Capacitance
—
—
ƒ = MHz
Diode Reverse Recovery Time
—
ns
T
J
= °C See Fig.
—
T
J
= °C
14
I
F
= A
Diode Peak Reverse Recovery Current
—
A
T
J
= °C See Fig.
—
T
J
= °C
15
V
R
= V
Diode Reverse Recovery Charge
—
nC
T
J
= °C See Fig.
—
T
J
= °C
16
di/dt = Aµs
Diode Peak Rate of Fall of Recovery
—
—
A/µs T
J
= °C See Fig.
During t
b
—
—
T
J
= °C
17
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