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IXFD80N10Q-8X

Description
Power Field-Effect Transistor, 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.480 X 0.283 INCH, DIE
CategoryDiscrete semiconductor    The transistor   
File Size53KB,3 Pages
ManufacturerIXYS
Environmental Compliance  
Download Datasheet Parametric View All

IXFD80N10Q-8X Overview

Power Field-Effect Transistor, 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.480 X 0.283 INCH, DIE

IXFD80N10Q-8X Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Parts packaging codeDIE
package instructionUNCASED CHIP, R-XUUC-N2
Reach Compliance Codeunknown
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain-source on-resistance0.018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUUC-N2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
HiPerFET
TM
Power MOSFET
Type
V
DSS
max.
V
IXFD76N07-7X
IXFD180N07-9X
IXFD340N07-9Y
IXFD180N085-9X
IXFD280N085-9Y
IXFD75N10-7X
IXFD80N10Q-8X
IXFD170N10-9X
IXFD230N10-9Y
IXFD70N15-7X
IXFD150N15-9X
IXFD50N20-7X
IXFD60N20F-74
IXFD66N20Q-72
IXFD88N20Q-82
IXFD120N20-9X
IXFD180N20-9Y
IXFD40N30Q-72
IXFD40N30-7X
IXFD52N30Q-82
IXFD73N30Q-8Y
IXFD90N30-9X
IXFD130N30-9Y
70
R
DS(ON)
max.
0.015
0.007
0.005
0.007
0.005
0.026
0.018
0.011
0.007
0.032
0.013
0.049
0.042
0.044
0.035
0.020
0.014
0.095
0.090
0.075
0.050
0.040
0.028
7X
9X
9Y
9X
9Y
7X
8X
9X
9Y
7X
9X
7X
74
72
82
9X
9Y
72
7X
82
8Y
9X
9Y
Chip
type
Chip size
dimensions
mm
8.84 x 7.18
14.20 x 10.60
15.81 x 14.31
14.20 x 10.60
15.81 x 14.31
8.84 x 7.18
12.2 x 7.20
14.20 x 10.60
15.81 x 14.31
8.84 x 7.18
14.20 x 10.60
8.84 x 7.18
9.58 x 7.13
8.89 x 7.16
12.17 x 7.14
14.20 x 10.60
15.81 x 14.31
8.89 x 7.16
8.84 x 7.18
12.17 x 7.14
13.98 x 9.02
14.20 x 10.60
15.81 x 14.31
mils
348 x 283
559 x 417
623 x 563
559 x 417
623 x 563
348 x 283
480 x 283
559 x 417
623 x 563
348 x 283
559 x 417
348 x 283
377 x 281
350 x 282
479 x 281
559 x 417
623 x 563
350 x 282
348 x 283
479 x 281
550 x 355
559 x 417
623 x 563
15 mil x 3
15 mil x 6
12 mil x 12
15 mil x 6
12 mil x 12
15 mil x 3
15 mil x 4
15 mil x 6
12 mil x 12
15 mil x 3
15 mil x 6
15 mil x 3
15 mil x 3
15 mil x 3
15 mil x 4
15 mil x 6
12 mil x 12
15 mil x 3
15 mil x 3
15 mil x 4
12 mil x 6
15 mil x 6
12 mil x 12
IXFH76N07
IXFK180N07
IXFN340N07
IXFK180N085
IXFN280N085
IXFH75N10
IXFH80N10Q
IXFK170N10
IXFN230N10
IXFH70N15
IXFK150N15
IXFH50N20
IXFH60N20F
IXFH66N20Q
IXFH88N20Q
IXFK120N20
IXFN180N20
IXFH40N30Q
IXFH40N30
IXFH52N30Q
IXFK73N30Q
IXFK90N30
IXFN130N30
Source -
bond wire
recommended
Equivalent
device
data sheet
HiPerFET
TM
Power MOSFETs
The
High Performance
MOSFET family of Power
MOSFETs is designed to provide superior dv/dt
performance while eliminating the need for discrete,
fast recovery "free wheeling diodes" in a broad range of
power switching applications.
This class of Power MOSFET uses IXYS' HDMOS
process, which improves the ruggedness of the MOSFET
while reducing the reverse recovery time of the fast
intrinsic diode to 250 ns or less at elevated (150°C)
junction temperature. The performance of the fast
intrinsic diode is comparable to discrete high voltage
diodes and is tailored to minimize power dissipation
and stress in the MOSFET.
85
100
150
200
300
This table reflects only new designed chips. Please contact factory for older designs.
© 2004 IXYS All rights reserved
8
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