PD -93770
PROVISIONAL
IRG4BAC50U
UltraFast Speed IGBT
C
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating
frequencies 8-40kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry Super-220™ (TO-273AA) package
V
CES
= 600V
G
E
V
CE(on) typ.
= 1.65V
@V
GE
= 15V, I
C
= 27A
N-channel
Benefits
• Generation 4 IGBT offers highest efficiency available
• Optimized for specified application conditions
Super-220™
(TO-273AA)
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
600
55
27
220
220
± 20
20
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.5
–––
TBD
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
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1
1/19/2000
IRG4BAC50U
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
18
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage –––
–––
V
CE(ON)
Collector-to-Emitter Saturation Voltage
–––
–––
V
GE(th)
Gate Threshold Voltage
3.0
∆
V
GE(th)
/
∆
T
J
Temperature Coeff. of Threshold Voltage
–––
g
fe
Forward Transconductance
16
–––
I
CES
Zero Gate Voltage Collector Current
–––
–––
I
GES
Gate-to-Emitter Leakage Current
–––
Typ.
–––
–––
0.60
1.65
2.0
1.6
–––
-13
24
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GE
= 0V, I
C
= 250µA
–––
V
V
GE
= 0V, I
C
= 1.0A
––– V/°C V
GE
= 0V, I
C
= 1.0mA
2.0
I
C
= 27A
V
GE
= 15V
–––
I
C
= 55A
See Fig.2, 5
V
–––
I
C
= 27A , T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
––– mV/°C V
CE
= V
GE
, I
C
= 250µA
–––
S
V
CE
³ 15V, I
C
= 27A
250
µA V
GE
= 0V, V
CE
= 600V
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
5000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
±100
nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
C
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Collector Inductance
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
180
25
61
32
20
170
88
0.12
0.54
0.66
31
23
230
120
1.6
2.0
5.0
4000
250
52
Max. Units
Conditions
270
I
C
= 27A
38
nC V
CC
= 400V
See Fig. 8
90
V
GE
= 15V
–––
–––
T
J
= 25°C
ns
260
I
C
= 27A, V
CC
= 480V
130
V
GE
= 15V, R
G
= 5.0Ω
–––
Energy losses include "tail"
–––
mJ See Fig. 10, 11, 13, 14
0.9
–––
T
J
= 150°C,
–––
I
C
= 27A, V
CC
= 480V
ns
–––
V
GE
= 15V, R
G
= 5.0Ω
–––
Energy losses include "tail"
–––
mJ See Fig. 13, 14
–––
nH Measured 5mm from package
–––
–––
V
GE
= 0V
–––
pF
V
CC
= 30V
See Fig. 7
–––
ƒ = 1.0MHz
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. (See Fig. 13b)
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 5.0Ω,
(See Fig. 13a)
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BAC50U
80
F o r b o th :
T rian gu la r w a ve:
60
L oad C urre nt (A )
D u t y c yc le: 5 0%
T J = 1 2 5 °C
T s in k = 9 0 °C
G a te d r ive a s sp ec ified
P o w e r D is sip atio n = 40 W
C la m p vo lta g e :
8 0 % o f ra te d
S q u are w a ve :
40
6 0 % o f ra ted
vo ltag e
20
Idea l d io des
0
0.1
1
10
A
100
f, F re qu e nc y (k H z)
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
I
C
, C o lle ctor-to-E m itter Cu rre n t (A )
1000
1000
100
I
C
, C ollec to r-to-Em itte r C u rre nt (A)
100
10
T
J
= 1 5 0 °C
T
J
= 1 5 0°C
T
J
= 2 5 °C
1
10
T
J
= 2 5 °C
0.1
0
1
V
GE
= 15V
2 0 µ s P U L S E W ID T H
A
10
1
4
6
8
V
C C
= 10 V
5 µs P U L S E W IDTH
A
10
12
V
C E
, C o lle c to r-to -E m itte r V o lta g e (V )
V
G E
, G a te -to -E m itte r V o lta g e (V )
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4BAC50U
60
50
V
CE
, C olle ctor-to-E m itte r V oltage (V)
V
G E
= 15 V
2.5
M aximum D C Collector Current (A )
V
G E
= 1 5V
8 0 µs P U L S E W ID TH
I
C
= 5 4 A
40
2.0
30
I
C
= 2 7 A
1.5
20
I
C
= 14 A
10
0
25
50
75
100
125
150
1.0
-60
-40
-20
0
20
40
60
80
100 120
A
140 160
T
C
, C ase Tem perature (°C)
T
J
, Ju n c tio n Te m p e ra tu re (°C )
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
1
T h e rm a l R e s p o n se (Z
thJ C
)
D = 0 .5 0
0 .2 0
0 .1
0 .1 0
0 .0 5
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
N ote s :
1 . D u ty f ac t or D = t
1
/t
2
P
D M
t
1
t2
0 .0 2
0 .0 1
0 .0 1
0 .0 0 0 0 1
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
t
1
, R e c ta n g u la r P u ls e D ura tio n (s e c )
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BAC50U
8000
V
G E
, Gate-to-Emitter Voltage (V)
V
GE
C
ie s
C
re s
C
o es
=
=
=
=
0V ,
f = 1M Hz
C
ge
+ C
gc
, C
ce
SH OR T ED
C
gc
C
ce
+ C
gc
20
V
C E
= 400V
I
C
= 27A
C, Capacitance (pF)
16
6000
C
ie s
12
4000
C
oe s
2000
8
C
res
4
0
1
10
A
100
0
0
40
80
120
160
A
200
V
C E
, C o lle c to r-to -E m itte r V o lta g e (V )
Q
g
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
2.2
To ta l S w itc h in g L os se s (m J)
2.0
V
C C
V
G E
T
J
I
C
= 480V
= 15V
= 25°C
= 27A
10
R
G
= 5 .0
Ω
V
GE
= 15V
V
CC
= 480V
I
C
= 5 4 A
Total Switching Losses (mJ)
1.8
1.6
I
C
= 2 7A
1
1.4
I
C
= 1 4 A
1.2
1.0
0.8
0.6
0
10
20
30
40
50
A
60
0.1
-60
-40
-20
0
20
40
60
80
100
120 140
A
160
RG, Gate Resistance (Ω)
T
J
, J u n ctio n T e m p e ra tu re (°C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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