PD - 96126
IRF7316QPbF
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Advanced Process Technology
Ultra Low On-Resistance
Dual P- Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
HEXFET
®
Power MOSFET
8
7
S1
G1
S2
G2
1
2
3
4
D1
D1
D2
D2
V
DSS
= -30V
R
DS(on)
= 0.058Ω
6
5
Top View
Description
Specifically designed for Automotive applications, these
HEXFET
®
Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
in Tape & Reel.
SO-8
Absolute Maximum Ratings ( T
A
= 25°C Unless Otherwise Noted)
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
A
= 25°C
T
A
= 70°C
Maximum
Units
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T
A
= 25°C
Maximum Power Dissipation
T
A
= 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
-30
± 20
-4.9
-3.9
-30
-2.5
2.0
1.3
140
-2.8
0.20
-5.0
-55 to + 150
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
R
θJA
Limit
62.5
Units
°C/W
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1
08/29/07
IRF7316QPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
-1.0
Typ. Max. Units
Conditions
V
V
GS
= 0V, I
D
= -250µA
0.022 V/°C Reference to 25°C, I
D
= -1mA
0.042 0.058
V
GS
= -10V, I
D
= -4.9A
Ω
0.076 0.098
V
GS
= -4.5V, I
D
= -3.6A
V
V
DS
= V
GS
, I
D
= -250µA
7.7
S
V
DS
= -15V, I
D
= -4.9A
-1.0
V
DS
= -24V, V
GS
= 0V
µA
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 55°C
100
V
GS
= -20V
nA
-100
V
GS
= 20V
23
34
I
D
= -4.9A
3.8 5.7
nC V
DS
= -15V
5.9 8.9
V
GS
= -10V, See Fig. 10
13
19
V
DD
= -15V
13
20
I
D
= -1.0A
ns
34
51
R
G
= 6.0Ω
32
48
R
D
= 15Ω
710
V
GS
= 0V
380
pF
V
DS
= -25V
180
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
-2.5
A
-30
V
ns
nC
-0.78 -1.0
44
66
42
63
Conditions
D
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
S
T
J
= 25°C, I
S
= -1.7A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.7A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 35mH
R
G
= 25Ω, I
AS
= -2.8A.
Surface mounted on FR-4 board, t
≤
10sec.
I
SD
≤
-2.8A, di/dt
≤
150A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
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2
IRF7316QPbF
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
100
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
10
-3.0V
20µs PULSE WIDTH
T
J
= 25°C
A
0.1
1
10
-3.0V
1
1
0.1
1
20µs PULSE WIDTH
T
J
= 150°C
A
10
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100
-I
D
, Drain-to-Source Current (A)
T
J
= 25°C
T
J
= 150°C
10
-I
SD
, Reverse Drain Current (A)
T
J
= 150°C
10
T
J
= 25°C
1
3.0
3.5
4.0
4.5
V
DS
= -10V
20µs PULSE WIDTH
5.0
5.5
6.0
A
1
0.4
0.6
0.8
1.0
V
GS
= 0V
1.2
A
1.4
-V
GS
, Gate-to-Source Voltage (V)
-V
SD
, Source-to-Drain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
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3
IRF7316QPbF
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
-
4.9A
I
D
=
-
4.9A
R
DS
(on) , Drain-to-Source On Resistance (Ω)
2.0
0.6
0.5
1.5
0.4
1.0
0.3
0.2
V
GS
= -4.5V
0.5
0.1
0.0
-60 -40 -20
-
10V
V
GS
=
-
10V
0
20
40
60
80 100 120 140 160
V
GS
= -10V
A
0.0
0
10
20
30
T
J
, Junction Temperature (
°
C)
-I
D
, Drain Current (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
R
DS
(on) , Drain-to-Source On Resistance (Ω)
0.16
300
E
AS
, Single Pulse Avalanche Energy (mJ)
250
ID
TOP
-1.3A
-2.2A
BOTTOM -2.8A
0.12
200
0.08
I
D
= -4.9A
150
100
0.04
50
0.00
0
-V
GS
, Gate -to-Source Voltage (V)
3
6
9
12
15
A
0
25
Starting T
J
, Junction Temperature (
°
C)
50
75
100
125
150
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Fig 7.
Typical On-Resistance Vs. Gate
Voltage
Fig 8.
Maximum Avalanche Energy
Vs. Drain Current
4
IRF7316QPbF
1400
V
GS
= 0V
f = 1 MHz
SHORTED
20
1200
Coss = Cds + Cgd
-V
GS
, Gate-to-Source Voltage (V)
Ciss = Cgs + Cgd + Cds
Crss = Cgd
I
D
= -4.9A
V
DS
=-15V
16
C, Capacitance (pF)
1000
C
iss
C
oss
800
12
600
8
400
C
rss
4
200
0
1
10
100
A
0
0
10
20
30
40
-
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
Thermal Response (Z
thJA
)
0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
1
10
100
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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