BFP194E6327 datasheet, PDF - EEWORLD Datasheet

BFP194E6327: DescriptionRF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, PNP; CategoryDiscrete semiconductor The transistor; File Size165KB，7 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BFP194E6327 Overview

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, PNP

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	2 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
highest frequency band	L BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	5000 MHz
Base Number Matches	1

	BFP194E6327
Description	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, PNP
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	2 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
highest frequency band	L BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	5000 MHz
Base Number Matches	1

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