BCW79 datasheet, PDF - EEWORLD Datasheet

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BCW79: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-39; CategoryDiscrete semiconductor The transistor; File Size129KB，1 Pages; ManufacturerMicro Electronics; Websitehttp://www.microelectr.com.hk

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BCW79 Overview

Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-39

BCW79 Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	63
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.87 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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BCW79 Related Products

	BCW79	HCHP2208100PPM8.98K0.5%GTRR015	BFT30	BFR77	BCW91	BCW93
Description	Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-39	Fixed Resistor, Metal Glaze/thick Film, 0.75W, 8980ohm, 200V, 0.5% +/-Tol, -100,100ppm/Cel, 2208,	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39	Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Reach Compliance Code	unknown	compliant	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Number of terminals	3	2	3	3	3	3
Package form	CYLINDRICAL	SMT	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
package instruction	CYLINDRICAL, O-MBCY-W3	-	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3
Maximum collector current (IC)	0.8 A	-	1 A	1 A	0.8 A	0.8 A
Collector-emitter maximum voltage	32 V	-	60 V	80 V	60 V	60 V
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	63	-	75	40	100	100
JEDEC-95 code	TO-39	-	TO-18	TO-39	TO-92	TO-92
JESD-30 code	O-MBCY-W3	-	O-MBCY-W3	O-MBCY-W3	O-PBCY-W3	O-PBCY-W3
Number of components	1	-	1	1	1	1
Package body material	METAL	-	METAL	METAL	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	-	ROUND	ROUND	ROUND	ROUND
Polarity/channel type	PNP	-	NPN	NPN	NPN	PNP
Maximum power dissipation(Abs)	0.87 W	-	0.36 W	0.8 W	0.61 W	0.61 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	-	NO	NO	NO	NO
Terminal form	WIRE	-	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	-	100 MHz	50 MHz	100 MHz	135 MHz
Maximum operating temperature	-	155 °C	175 °C	175 °C	150 °C	150 °C
Maker	-	-	Micro Electronics	Micro Electronics	Micro Electronics	Micro Electronics

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