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IRHLUB740Z4

Description
Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UB-3
CategoryDiscrete semiconductor    The transistor   
File Size134KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

IRHLUB740Z4 Overview

Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UB-3

IRHLUB740Z4 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionHERMETIC SELALED, UB-3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)0.8 A
Maximum drain current (ID)0.8 A
Maximum drain-source on-resistance0.55 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XDSO-N3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.6 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 95813
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (UB)
Product Summary
Part Number Radiation Level R
DS(on)
IRHLUB770Z4 100K Rads (Si) 0.55Ω
IRHLUB730Z4 300K Rads (Si) 0.55Ω
IRHLUB740Z4 600K Rads (Si)
0.55Ω
IRHLUB780Z4 1000K Rads (Si) 0.55Ω
I
D
0.8A
0.8A
0.8A
0.8A
IRHLUB770Z4
60V, N-CHANNEL
c
TECHNOLOGY
UB
International Rectifier’s R7
TM
Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary P-Channel Available -
IRHLUB7970Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C
Continuous Drain Current
0.8
0.5
3.2
0.6
0.0045
±10
2.0
0.8
0.06
4.0
-55 to 150
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
IAR
EAR
dv/dt
TJ
T STG
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5s)
43 (Typical)
mg
For footnotes refer to the last page
www.irf.com
1
02/02/04

IRHLUB740Z4 Related Products

IRHLUB740Z4 IRHLUB780Z4
Description Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UB-3 Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UB-3
Is it Rohs certified? incompatible incompatible
package instruction HERMETIC SELALED, UB-3 HERMETIC SELALED, UB-3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (Abs) (ID) 0.8 A 0.8 A
Maximum drain current (ID) 0.8 A 0.8 A
Maximum drain-source on-resistance 0.55 Ω 0.55 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-XDSO-N3 R-XDSO-N3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.6 W 0.6 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form NO LEAD NO LEAD
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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