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GS74117AGX-12

Description
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 6 X 10 MM, LEAD FREE, FPBGA-48
Categorystorage    storage   
File Size316KB,12 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance  
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GS74117AGX-12 Overview

Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 6 X 10 MM, LEAD FREE, FPBGA-48

GS74117AGX-12 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeBGA
package instructionTFBGA, BGA48,6X8,30
Contacts48
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Maximum access time12 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B48
JESD-609 codee1
length10 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of terminals48
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3.3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.01 A
Minimum standby current3 V
Maximum slew rate0.09 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width6 mm
Base Number Matches1
GS74117AX
FP-BGA
Commercial Temp
Industrial Temp
Features
• Fast access time: 8, 10, 12 ns
• CMOS low power operation: 130/105/95 mA at minimum
cycle time
• Single 3.3 V power supply
• All inputs and outputs are TTL-compatible
• Byte control
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• Package:
X: 6 mm x 10 mm Fine Pitch Ball Grid Array package
GX: Pb-Free 6 mm x 10 mm Fine Pitch Ball Grid Array
package
256K x 16
4Mb Asynchronous SRAM
1
2
3
4
8, 10, 12 ns
3.3 V V
DD
Center V
DD
and V
SS
Fine Pitch BGA 256K x 16 Bump Configuration
5
6
A
B
C
D
E
F
G
H
LB
DQ
1
DQ
3
V
SS
V
DD
DQ
6
DQ
8
NC
OE
UB
DQ
2
DQ
4
DQ
5
DQ
7
NC
A
12
A
0
A
3
A
5
A
17
NC
A
8
A
10
A
13
A
1
A
4
A
6
A
7
A
16
A
9
A
11
A
14
A
2
CE
NC
DQ
16
DQ
15
DQ
14
DQ
13
DQ
12
V
DD
V
SS
Description
The GS74117A is a high speed CMOS Static RAM organized
as 262,144 words by 16 bits. Static design eliminates the need
for external clocks or timing strobes. The GS operates on a
single 3.3 V power supply and all inputs and outputs are TTL-
compatible. The GS74117A is available in a 6 x 10 mm Fine
Pitch BGA package.
DQ
10
DQ
11
WE
A
15
DQ
9
NC
Package X
6 x 10 mm Substrate
Top View
Pin Descriptions
Symbol
A
0
–A
17
DQ
1
–DQ
16
CE
LB
UB
WE
OE
V
DD
V
SS
NC
Description
Address input
Data input/output
Chip enable input
Lower byte enable input
(DQ1 to DQ8)
Upper byte enable input
(DQ9 to DQ16)
Write enable input
Output enable input
+3.3 V power supply
Ground
No connect
Rev: 1.05b 6/2010
1/12
© 2001, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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