TRANSISTOR 8 ohm, Si, POWER, FET, FET General Purpose Power
| Parameter Name | Attribute value |
| package instruction | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown |
| Other features | LOGIC LEVEL COMPATIBLE |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Maximum drain-source on-resistance | 8 Ω |
| JESD-30 code | R-PDSO-G4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| 934008950115 | BSP127135 | |
|---|---|---|
| Description | TRANSISTOR 8 ohm, Si, POWER, FET, FET General Purpose Power | TRANSISTOR 350 mA, 270 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal |
| package instruction | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown | unknown |
| Other features | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Maximum drain-source on-resistance | 8 Ω | 8 Ω |
| JESD-30 code | R-PDSO-G4 | R-PDSO-G4 |
| Number of components | 1 | 1 |
| Number of terminals | 4 | 4 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal form | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |