M54HC85
RAD HARD 4-BIT MAGNITUDE COMPARATOR
s
s
s
s
s
s
s
s
s
s
s
HIGH SPEED:
t
PD
= 20 ns (TYP.) at V
CC
= 6V
LOW POWER DISSIPATION:
I
CC
=4µA(MAX.) at T
A
=25°C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 4mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
PIN AND FUNCTION COMPATIBLE WITH
54 SERIES 85
SPACE GRADE-1: ESA SCC QUALIFIED
50 krad QUALIFIED, 100 krad AVAILABLE ON
REQUEST
NO SEL UNDER HIGH LET HEAVY IONS
IRRADIATION
DEVICE FULLY COMPLIANT WITH
SCC-9209-004
DILC-16
FPC-16
ORDER CODES
PACKAGE
DILC
FPC
FM
M54HC85D
M54HC85K
EM
M54HC85D1
M54HC85K1
DESCRIPTION
The M54HC85 is an high speed CMOS 4-BIT
MAGNITUDE COMPARATOR fabricated with
silicon gate C
2
MOS technology.
This comparator compares two 4-bit words and
provides an high voltage level on one of the A>B
out, A=B out and A<B out outputs. The comparing
bit number is easily expanded by cascading
several devices as shown in the typical
application.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
PIN CONNECTION
June 2004
Rev. 1
1/10
M54HC85
Figure 3: Logic Diagram
This logic diagram has not be used to estimate propagation delays
Table 3: Absolute Maximum Ratings
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Parameter
Value
-0.5 to +7
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±
20
±
20
±
25
±
50
300
-65 to +150
265
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
P
D
Power Dissipation
T
stg
T
L
Storage Temperature
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Table 4: Recommended Operating Conditions
Symbol
V
CC
V
I
V
O
T
op
t
r
, t
f
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time
V
CC
= 2.0V
V
CC
= 4.5V
V
CC
= 6.0V
Parameter
Value
2 to 6
0 to V
CC
0 to V
CC
-55 to 125
0 to 1000
0 to 500
0 to 400
Unit
V
V
V
°C
ns
ns
ns
3/10
M54HC85
Table 7: Capacitive Characteristics
Test Condition
Symbol
Parameter
V
CC
(V)
5.0
5.0
T
A
= 25°C
Min.
Typ.
5
23
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
Unit
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance (note
1)
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
Figure 4: Test Circuit
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50Ω)
5/10
京公网安备 11010802033920号
EEWORLD
