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AO4701

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size290KB,6 Pages
ManufacturerAlpha & Omega Semiconductor
Websitehttp://www.aosmd.com/about
Download Datasheet Parametric View All

AO4701 Overview

Transistor

AO4701 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompliant
Base Number Matches1
AO4701
30V P-Channel MOSFET with Schottky Diode
General Description
The AO4701 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch.
Product Summary
V
DS
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-4.5V)
R
DS(ON)
(at V
GS
=-2.5V)
100% UIS Tested
100% R
g
Tested
-30V
-5A
< 48mΩ
< 57mΩ
< 80mΩ
Schottky
V
DS
(V)=30V, I
F
=3A, V
F
=0.5V@1A
SOIC-8
Top View
Bottom View
Top View
A
A
S
G
K
K
D
D
A
Pin1
K
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
MOSFET
Symbol
Drain-Source Voltage
V
DS
-30
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Schottky
Units
V
V
A
A
mJ
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
V
KA
I
F
P
D
T
J
, T
STG
±12
-5
-4
-25
18
16
30
4.4
3.2
2
1.3
-55 to 150
2
1.3
-55 to 150
Avalanche energy L=0.1mH
Schottky reverse voltage
C
Continuous Forward T
A
=25°
Current
Power Dissipation
B
V
A
W
°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter: MOSFET
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Parameter: Schottky
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
R
θJA
R
θJL
Typ
48
74
32
49
72
31
Max
62.5
90
40
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
t
10s
Steady-State
Steady-State
Rev 5: May 2011
www.aosmd.com
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