Preliminary Data Sheet
May 2004
AGR21030E
30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21030E is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for wideband
code division multiple access (W-CDMA), single and
multicarrier class AB wireless base station power
amplifier applications.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR21030EU
AGR21030EF
Sym
Value
Unit
R
θJC
R
θJC
2.0
2.0
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at T
C
= 25 °C:
AGR21030EU
AGR21030EF
Derate Above 25
°C:
AGR21030EU
AGR21030EF
CW RF Input Power
(V
DS
= 31 V)
Operating Junction Tempera-
ture
Storage Temperature Range
Sym Value Unit
V
DSS
65
Vdc
V
GS
–0.5, 15 Vdc
P
D
P
D
—
—
—
T
J
87.5
87.5
0.5
0.5
10
200
W
W
W/°C
W/°C
W
°C
°C
AGR21030EU (unflanged)
AGR21030EF (flanged)
Figure 1. Available Packages
Features
■
■
■
■
■
■
■
■
Typical performance for 2 carrier 3GPP
W-CDMA systems. F1 = 2135 MHz and
F2 = 2145 MHz with 3.84 MHz channel BW, adja-
cent channel BW = 3.84 MHz at F1 – 5 MHz and
F2 + 5 MHz. Third-order distortion is measured
over 3.84 MHz BW at F1 – 10 MHz and
F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01%
(probability) CCDF:
— Output power: 7 W.
— Power gain: 14.5 dB.
— Efficiency: 26%.
— IM3: –34 dBc.
— ACPR: –37 dBc.
— Return loss: –12 dB.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 2140 MHz, 30 W continu-
ous wave (CW) output power.
Large signal impedance parameters available.
T
STG
–65, 150
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR21030E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR21030E
30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Preliminary Data Sheet
May 2004
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 4. dc Characteristics
Parameter
Off Characteristics
Drain-source Breakdown Voltage (V
GS
= 0, I
D
= 38 µA)
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
Zero Gate Voltage Drain Leakage Current (V
DS
= 28 V, V
GS
= 0 V)
On Characteristics
Forward Transconductance (V
DS
= 10 V, I
D
= 0.4 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 100 µA)
Gate Quiescent Voltage (V
DS
= 28 V, I
D
= 300 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 0.4 A)
Table 5. RF Characteristics
Parameter
Symbol
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
Common-source Amplifier Power Gain*
Drain Efficiency*
Third-order Intermodulation Distortion*
(IM3 distortion measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
Output Power, 1 dB Compression Point
(V
DD
= 28 V, f
C
= 2140.0 MHz)
Input Return Loss*
Output Mismatch Stress
(V
DD
= 28 V, P
OUT
= 30 W (CW), I
DQ
= 300 mA, f
C
= 2140.0 MHz
VSWR = 10:1; [all phase angles])
C
RSS
—
0.8
—
pF
Min
Typ
Max
Unit
G
FS
V
GS(TH)
V
GS(Q)
V
DS(ON)
—
2.8
3.0
—
2.4
3.4
3.8
0.30
—
4.0
4.6
—
S
Vdc
Vdc
Vdc
V
(BR)DSS
I
GSS
I
DSS
65
—
—
—
—
—
—
1
3
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Functional Tests (in Agere Systems Supplied Test Fixture)
G
PS
η
IM3
13.5
24
—
14.5
26
–34
—
—
–32
dB
%
dBc
ACPR
—
–37
–36
dBc
P1dB
IRL
ψ
27
—
30
–12
—
–10
W
dB
No degradation in output power.
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135 MHz, and f2 = 2145 MHz.
V
DD
= 28 Vdc, I
DQ
= 300 mA, and P
OUT
= 7 W avg.
Nominal operating voltage 28 Vdc. Qualified for a maximum operating voltage of 32 Vdc ±0.5 V.
2
Agere Systems Inc.
Preliminary Data Sheet
May 2004
AGR21030E
30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR21030E
FB1
V
GG
+
C4
C3
Z1
RF INPUT
C1
C2
Z5
Z3
Z4
2
1
3
PINS:
1. DRAIN
2. GATE
3. SOURCE
Z6
Z9
C6
C7
Z7
C8
C5
Z8
RF OUTPUT
C9
C10
R1
V
DD
+
Z2
DUT
A. Schematic
Parts List:
■
Microstrip line: Z1, 0.510 in. x 0.066 in.; Z2, 0.470 in. x 0.066 in.; Z3, 0.375 in. x 0.066 in. Z4, 0.280 in. x 0.540 in.; Z5, 0.570 in. x 0.050 in.;
Z6, 0.360 in. x 0.390 in.; Z7, 0.640 in. x 0.125 in.; Z8, 0.685 in. x 0.066 in.; Z9, 0.685 in. x 0.050 in.
®
■
ATC
chip capacitor: C1, C5: 8.2 pF 100B8R2JW500X; C2, C6 6.8 pF 100B6R8JW500X.
®
■
Kemet
capacitor: C8 0.01 µF C1206104K5RAC7800; C9 0.1 µF GRM40X7R103K100AL.
®
■
Vitramon
1206 capacitor: C3, C7: 22,000 pF.
®
■
Sprague
tantalum capacitor: C4, C10: 22 µF, 35 V.
®
■
Fair-Rite
ferrite bead: FB1 2743019447.
■
1206 size chip resistor: R1 12
Ω.
®
■
Taconic
ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
ε
r = 3.5.
B. Component Layout
Figure 2. AGR21030E Test Circuit
Agere Systems Inc.
3
AGR21030E
30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Preliminary Data Sheet
May 2004
Typical Performance Characteristics
A
RD
U
CT
S
TOW
0.48
IN
D
90
0.0
Ð
>
W
A
V
EL
E
N
GTH
170
0.49
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0.0
Ð
D
L
OA
D
<
OW
A
R
7
±
180
HST
0.4
70
N
GT
-1
E
V
EL
WA
<Ð
-90
-160
50
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
0.2
0.49
0.48
)
/
Yo
(-jB
CE
0.6
-85
N
TA
EP
SC
4
0.0
50
-1
-80
U
ES
V
TI
UC
0.4
0.3
6
IN
D
-75
R
5
0.0
O
),
Zo
5
0.4
X/
40
-1
-70
06
0.6
1.8
-60
1.6
0.7
0.8
0.9
1.0
1.2
5
-5
0
-5
5
-4
MHz (f)
2110 (f1)
2140 (f2)
2170 (f3)
Z
L
Ω
Z
S
Ω
(Complex
Source Impedance) (Complex Optimum Load Impedance)
4.64 – j16.5
10.49 – j6.22
4.43 – j15.7
10.36 – j6.05
4.26 – j15.0
10.33 – j5.93
DRAIN (1)
Z
L
SOURCE (3)
GATE (2)
Z
S
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
4
0.3
0.1
4
6
-3
-70
5
0.35
0.15
0.36
0.14
-80
-4
0
0.37
0.13
-90
0.12
0.38
0.11
-100
0.39
0.1
0.4
-110
0.0
0.4
9
1
0.4
2
Z
0
= 20
Ω
1.4
32
0.
3
0.3
7
0.1
-30
-60
0.2
Z
S
CA
P
A
18
0.
0
-5
-25
0
-65
.5
0.
2.
0
f2
CI
T
IVE
f1
0.
44
0.4
RE
AC
TA
NC
EC
OM
-12
0
0.0
8
PO
N
EN
T
(-j
4
0.
-15
4.0
-20
3.
0
1.
0
Z
L
0.8
0.6
Agere Systems Inc.
5.0
1.
0.2
0
-10
f3
f1
8
0.
10
0.1
0.4
50
20
0.
8
0.25
0.26
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL
ECTI
ON
COEFFI
CI
EN
T
I
N
D
EG
R
L
E
OF
EES
ANG
I
SSI
ON
COEFFI
CI
EN
T
I
N
TRA
N
SM
D
EGR
EES
L
E
OF
ANG
0.6
0.4
10
0.1
0.
07
-1
30
0.
43
20
0.2
0.2
0.3
-4
0
50
-20
0.2
2
0.2
8
0.2
9
0.2
1
-30
0.
19
0.
31
Preliminary Data Sheet
May 2004
AGR21030E
30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
(continued)
16.0
15.5
15.0
POWER GAIN (dB)
S
14.5
14.0
13.5
13.0
12.5
12.0
11.5
11.0
0.10
TEST CONDITIONS:
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz.
Two-tone measurement, 10 MHz tone spacing.
I
DQ
= 400 mA
I
DQ
= 350 mA
I
DQ
= 300 mA
I
DQ
= 250 mA
I
DQ
= 200 mA
1.00
10.00
100.00
OUTPUT POWER (W) PEP
Figure 4. Two-Tone Power Gain vs. Output Power and IDQ
-20.0
-25.0
IMD3, THIRD ORDER (dBc)
-30.0
-35.0
-40.0
-45.0
-50.0
-55.0
-60.0
-65.0
-70.0
0.10
TEST CONDITIONS:
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz.
Two-tone measurement, 10 MHz tone spacing.
I
DQ
= 400 mA
I
DQ
= 200 mA
I
DQ
= 300 mA
I
DQ
= 250 mA
I
DQ
= 350 mA
1.00
10.00
100.00
OUTPUT POWER (W) PEP
Figure 5. IMD3 vs. Output Power and IDQ
Agere Systems Inc.
5
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