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M58BW016DT7T3FF

Description
512K X 32 FLASH 3V PROM, 70 ns, PQFP80
Categorystorage    storage   
File Size1MB,70 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
Download Datasheet Parametric View All

M58BW016DT7T3FF Overview

512K X 32 FLASH 3V PROM, 70 ns, PQFP80

M58BW016DT7T3FF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeQFP
package instruction14 X 20 MM, LEAD FREE, PLASTIC, QFP-80
Contacts80
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time70 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PQFP-G80
length20 mm
memory density16777216 bi
Memory IC TypeFLASH
memory width32
Number of functions1
Number of departments/size8,31
Number of terminals80
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize512KX32
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Encapsulate equivalent codeQFP80,.7X.9,32
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5/3.3,3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height3.4 mm
Department size2K,16K
Maximum standby current0.000005 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width14 mm
M58BW016DB M58BW016DT
M58BW016FT M58BW016FB
16 Mbit (512 Kbit x 32, boot block, burst)
3 V supply Flash memories
Features
Supply voltage
– V
DD
= 2.7 V to 3.6 V for program, erase
and read
– V
DDQ
= V
DDQIN
= 2.4 V to 3.6 V for I/O
buffers
– V
PP
= 12 V for fast program (optional)
High performance
– Access times: 70, 80 ns
– 56 MHz effective zero wait-state burst read
– Synchronous burst read
– Asynchronous page read
Hardware block protection
– WP pin for write protect of the 4 outermost
parameter blocks and all main blocks
– RP pin for write protect of all blocks
Optimized for FDI drivers
– Fast program / erase suspend latency
time < 6 µs
– Common Flash interface
Memory blocks
– 8 parameters blocks (top or bottom)
– 31 main blocks
Low power consumption
– 5 µA typical deep power-down
– 60 µA typical standby for M58BW016DT/B
150 µA typical standby for M58BW016FT/B
– Automatic standby after asynchronous read
Electronic signature
– Manufacturer code: 20h
– Top device code: 8836h
– Bottom device code: 8835h
100 K write/erase cycling + 20 years data
retention (minimum)
High reliability level with over 1 M write/erase
cycling sustained
ECOPACK
®
packages available
PQFP80 (T)
LBGA
LBGA80 10 × 12 mm
March 2008
Rev 17
1/70
www.numonyx.com
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