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M58BW16FT5T3T

Description
512K X 32 FLASH 3.3V PROM, 45 ns, PQFP80
Categorystorage    storage   
File Size1MB,87 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M58BW16FT5T3T Overview

512K X 32 FLASH 3.3V PROM, 45 ns, PQFP80

M58BW16FT5T3T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeQFP
package instructionQFP, QFP80,.7X.9,32
Contacts80
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time55 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PQFP-G80
length20 mm
memory density16777216 bi
Memory IC TypeFLASH
memory width32
Humidity sensitivity level1
Number of functions1
Number of departments/size8,31
Number of terminals80
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize512KX32
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Encapsulate equivalent codeQFP80,.7X.9,32
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply2.5/3.3,3/3.3 V
Programming voltage3.3 V
Certification statusNot Qualified
Maximum seat height3.4 mm
Department size2K,16K
Maximum standby current0.00015 A
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)3.3 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)2.7 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width14 mm
Base Number Matches1
M58BW16F
M58BW32F
16 or 32 Mbit (x 32, boot block, burst)
3.3 V supply Flash memories
Preliminary Data
Features
Supply voltage
– V
DD
= 2.7 V to 3.6 V (45 ns) or
V
DD
= 2.5 V to 3.3 V (55 ns)
– V
DDQ
= V
DDQIN
= 2.4 V to 3.6 V for I/O
buffers
High performance
– Access times: 45 and 55 ns
– Synchronous burst reads
– 75 MHz effective zero wait-state burst read
– Asynchronous page reads
M58BW32F memory organization:
– Eight 64 Kbit small parameter blocks
– Four 128 Kbit large parameter blocks
– Sixty-two 512 Kbit main blocks
M58BW16F memory organization:
– Eight 64 Kbit parameter blocks
– Thirty-one 512 Kbit main blocks
Hardware block protection
– WP pin to protect any block combination
from Program and Erase operations
– PEN signal for Program/Erase Enable
Irreversible modify protection (OTP like) on
128 Kbits:
– Block 1 (bottom device) or block 72 (top
device) in the M58BW32F
– Blocks 2 and 3 (bottom device) or blocks 36
and 35 (top device) in the M58BW16F
Security
– 64-bit unique device identifier (UID)
Fast programming
– Write to buffer and program capability
Optimized for FDI drivers
– Common Flash interface (CFI)
– Fast Program/Erase Suspend feature in
each block
Low power consumption
– 100 µA typical Standby current
PQFP80 (T)
LBGA
LBGA80 (ZA)
10 x 8 ball array
Electronic signature
– Manufacturer code: 0020h
– Top device codes:
M58BW32FT: 8838h
M58BW16FT: 883Ah
– Bottom device codes:
M58BW32FB: 8837h
M58BW16FB: 8839h
Automotive device grade 3:
– Temperature:
40 to 125 °C
– Automotive grade certified
March 2008
Rev 5
1/87
www.numonyx.com
1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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