BDS60A datasheet, PDF - EEWORLD Datasheet

BDS60A: DescriptionTransistor,; CategoryDiscrete semiconductor The transistor; File Size318KB，7 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BDS60A Overview

Transistor,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	3 A
Configuration	DARLINGTON
Minimum DC current gain (hFE)	750
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	8 W
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	10 MHz

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	BDS60A	BDS60B
Description	Transistor,	Transistor,
Is it Rohs certified?	incompatible	incompatible
Reach Compliance Code	unknown	unknown
Maximum collector current (IC)	3 A	3 A
Configuration	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	750	750
JESD-609 code	e0	e0
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	8 W	8 W
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	10 MHz	10 MHz

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