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BDS78

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size270KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BDS78 Overview

Transistor,

BDS78 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)30
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)8 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)7 MHz
This Material Copyrighted By Its Respective Manufacturer

BDS78 Related Products

BDS78 BDS202 BDS204
Description Transistor, Transistor, Transistor,
Is it Rohs certified? incompatible incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 3 A 3 A 3 A
Configuration Single Single Single
Minimum DC current gain (hFE) 30 30 30
JESD-609 code e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 8 W 8 W 8 W
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 7 MHz 7 MHz 7 MHz
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