BUK752R3-40C; BUK7E2R3-40C
N-channel TrenchMOS standard level FET
Rev. 01 — 3 May 2006
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package,
using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.
1.2 Features
I
TrenchMOS technology
I
175
°C
rated
I
Q101 compliant
I
Standard level compatible
1.3 Applications
I
Automotive systems
I
Motors, lamps and solenoids
I
General purpose power switching
I
12 V loads
1.4 Quick reference data
I
E
DS(AL)S
≤
1.2 J
I
I
D
≤
100 A
I
R
DSon
= 1.96 mΩ (typ)
I
P
tot
≤
333 W
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
gate (G)
drain (D)
source (S)
mounting base; connected to
drain
mb
mb
D
Simplified outline
Symbol
G
mbb076
S
1 2 3
1 2 3
SOT78 (TO-220AB)
SOT226 (I2PAK)
Philips Semiconductors
BUK752R3-40C; BUK7E2R3-40C
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2.
Ordering information
Package
Name
BUK752R3-40C
BUK7E2R3-40C
SC-46
I2PAK
Description
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
plastic single-ended package; low-profile 3-lead TO-220AB
Version
SOT78
SOT226
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
V
GS
= 10 V; see
Figure 2
and
3
limited by power dissipation at T
mb
= 25
°C
limited by package at T
mb
= 25
°C
limited by package at T
mb
= 100
°C
I
DM
P
tot
T
stg
T
j
I
DR
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current
T
mb
= 25
°C
limited by power dissipation
limited by package
I
DRM
peak reverse drain current
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs
unclamped inductive load; I
D
= 100 A; V
DS
≤
40 V;
R
GS
= 50
Ω;
V
GS
= 10 V; starting at T
j
= 25
°C
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
E
DS(AL)R
repetitive drain-source
avalanche energy
[1]
[2]
[3]
[4]
Current is limited by chip power dissipation rating.
Continuous current is limited by package.
Refer to document
9397 750 12572
for further information.
Conditions:
a) Maximum value not quoted. Repetitive rating defined in
Figure 16.
b) Single-pulse avalanche rating limited by T
j(max)
of 175
°C.
c) Repetitive avalanche rating limited by an average junction temperature of 170
°C.
d) Refer to application note
AN10273
for further information.
[3]
[1]
[2]
[3]
[1]
[2]
[2]
Conditions
R
GS
= 20 kΩ
Min
-
-
-
-
-
-
-
-
−55
−55
-
-
-
-
-
-
Max
40
40
±20
276
100
100
1104
333
+175
+175
Unit
V
V
V
A
A
A
A
W
°C
°C
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs;
see
Figure 3
T
mb
= 25
°C;
see
Figure 1
Source-drain diode
276
100
1104
1.2
[4]
A
A
A
J
BUK75_7E2R3-40C_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 3 May 2006
2 of 13
Philips Semiconductors
BUK752R3-40C; BUK7E2R3-40C
N-channel TrenchMOS standard level FET
120
P
der
(%)
80
03aa16
300
I
D
(A)
200
003aab004
40
100
(1)
0
0
50
100
150
T
mb
(
°
C)
200
0
0
50
100
150
T
mb
(°C)
200
P
der
P
tot
=
-----------------------
×
100
%
-
P
tot
(
25°C
)
V
GS
≥
10 V
(1) Capped at 100 A due to package.
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
10
4
I
D
(A)
10
3
limit R
DSon
= V
DS
/I
D
Fig 2. Continuous drain current as a function of
mounting base temperature
003aab028
δ
= 10
µs
100
µs
(1)
10
2
DC
10
1 ms
1
10 ms
100 ms
10
−1
10
−1
1
10
V
DS
(V)
10
2
T
mb
= 25
°C;
I
DM
is single pulse.
(1) Capped at 100 A due to package.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK75_7E2R3-40C_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 3 May 2006
3 of 13
Philips Semiconductors
BUK752R3-40C; BUK7E2R3-40C
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
SOT78
SOT226
vertical in free air
vertical in free air
-
-
60
60
-
-
K/W
K/W
Conditions
Min
-
Typ
-
Max
0.45
Unit
K/W
thermal resistance from junction to mounting base see
Figure 4
1
Z
th(j-mb)
(K/W)
δ
= 0.5
10
−1
0.2
0.1
0.05
0.02
10
−2
P
003aab020
δ
=
t
p
T
single shot
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK75_7E2R3-40C_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 3 May 2006
4 of 13
Philips Semiconductors
BUK752R3-40C; BUK7E2R3-40C
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
(BR)DSS
Parameter
drain-source breakdown voltage
Conditions
I
D
= 250
µA;
V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
;
see
Figure 9
and
10
T
j
= 25
°C
T
j
= 175
°C
T
j
=
−55 °C
I
DSS
drain leakage current
V
DS
= 40 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 175
°C
I
GSS
R
DSon
gate leakage current
drain-source on-state resistance
V
GS
=
±20
V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 25 A;
see
Figure 6
and
8
T
j
= 25
°C
T
j
= 175
°C
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
V
GS(pl)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
total gate charge
gate-source charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
from drain lead 6 mm from package to
center of die
from contact screw on mounting base to
center of die
from upper edge of drain mounting base
to center of die SOT226
L
S
internal source inductance
from source lead to source bonding pad
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 10 V; R
G
= 10
Ω
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
see
Figure 12
I
D
= 25 A; V
DD
= 32 V; V
GS
= 10 V;
see
Figure 14
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
175
4.9
67
5
-
-
-
-
nC
nC
nC
V
pF
pF
ns
ns
ns
ns
nH
nH
nH
nH
-
-
1.96
-
2.3
4.26
mΩ
mΩ
-
-
-
0.02
-
2
1
500
100
µA
µA
nA
2
1
-
3
-
-
4
-
4.4
V
V
V
40
36
-
-
-
-
V
V
Min
Typ
Max
Unit
Static characteristics
8492 11323 pF
1606 1927
1101 1508
65
133
146
119
4.5
3.5
2.5
7.5
-
-
-
-
-
-
-
-
BUK75_7E2R3-40C_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 3 May 2006
5 of 13
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