CT25AM12E datasheet, PDF - EEWORLD Datasheet

CT25AM12E: DescriptionInsulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel,; CategoryDiscrete semiconductor The transistor; File Size118KB，2 Pages; ManufacturerPOWEREX; Websitehttp://www.pwrx.com/Home.aspx

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CT25AM12E Overview

Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel,

Parameter Name	Attribute value
Maker	POWEREX
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	25 A
Collector-emitter maximum voltage	600 V
Maximum landing time (tf)	300 ns
Gate emitter threshold voltage maximum	6 V
Gate-emitter maximum voltage	20 V
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum rise time (tr)	200 ns
surface mount	NO

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