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PA004N

Description
Power Bipolar Transistor, 12A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size42KB,3 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric Compare View All

PA004N Overview

Power Bipolar Transistor, 12A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN

PA004N Parametric

Parameter NameAttribute value
package instructionTO-3P, 3 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)12 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Nominal transition frequency (fT)35 MHz
Base Number Matches1
NEW PRODUCT FOR
POWER AUDIO APPLICATION
Magnatec’s New Complimentary PA Range of
Power Audio Devices Launch for the
MILLENNIUM
PA004N
MECHANICAL DATA
Dimensions in mm
SILICON NPN
POWER TRANSISTOR
Complimentary to PA004P
FEATURES
• AUDIO POWER AMPLIFIER
• HIGH POWER CAR STEREO
• WIDE SOA
• HIGH POWER DISSIPATION
• HIGH CURRENT - 18A
• GOOD LINEARITY
TO3P
Pin 1 — Base
Pin 2 — Collector
Pin 3 — Emitter
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C unless otherwise stated)
BV
CBO
BV
CEO
BV
EBO
I
C
I
C
P
TOT
T
J
T
STG
Collector – Base Voltage
Collector – Emitter Voltage
Collector – Base Voltage
Collector Current
Collector Current (pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
160V
120V
9V
12A
22A
90W
150°C
–55 to 150°C
Magnatec.
Telephone +44(0)1455 554711.
Fax +44(0)1455 558843.
E-mail:
magnatec@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim.1/00

PA004N Related Products

PA004N
Description Power Bipolar Transistor, 12A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
package instruction TO-3P, 3 PIN
Reach Compliance Code unknown
ECCN code EAR99
Maximum collector current (IC) 12 A
Collector-emitter maximum voltage 120 V
Configuration SINGLE
Minimum DC current gain (hFE) 25
JESD-30 code R-PSFM-T3
Number of components 1
Number of terminals 3
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form FLANGE MOUNT
Polarity/channel type NPN
Certification status Not Qualified
surface mount NO
Terminal form THROUGH-HOLE
Terminal location SINGLE
Transistor component materials SILICON
Nominal transition frequency (fT) 35 MHz
Base Number Matches 1

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