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V82EBCO

Description
Variable Capacitance Diode, 82pF C(T), 22V, Silicon, DIE-1
CategoryDiscrete semiconductor    diode   
File Size33KB,1 Pages
ManufacturerCobham PLC
Download Datasheet Parametric View All

V82EBCO Overview

Variable Capacitance Diode, 82pF C(T), 22V, Silicon, DIE-1

V82EBCO Parametric

Parameter NameAttribute value
Parts packaging codeDIE
package instructionO-LALF-W2
Contacts1
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW LEAKAGE
Minimum breakdown voltage22 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio4
Nominal diode capacitance82 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
minimum quality factor9
Maximum reverse current0.1 µA
Reverse test voltage20 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

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